onsemi N-Channel MOSFET 24 A 650 V Enhancement 3-Pin TO-247 FCH125N65S3R0-F155

onsemi FCH125N65S3R0-F155 N-Channel Enhancement MOSFET is a high voltage, high current discrete semiconductor device housed in a TO-247 package. It features a maximum continuous drain current of 24 amperes and can sustain a drain-source voltage up to 650 volts, suitable for demanding power switching and electronic circuit applications.

This MOSFET utilizes the advanced SuperFET III technology, employing charge balance techniques to minimize on-resistance and gate charge, which significantly reduces conduction and switching losses while improving overall efficiency. The device is optimized for high switching speeds and low electromagnetic interference, making it ideal for computing, industrial, and consumer electronic equipment.

Operating over a broad temperature range from -55°C to 150°C, it assures reliable performance in varied harsh environments. The 3-pin TO-247 through-hole package supports easy mounting for power assemblies. The device offers a low forward voltage drop of 1.2V and includes an internal gate resistance of 0.5 Ω to enhance gate drive reliability.

Typical industrial applications include power supplies, motor controls, UPS systems, solar inverters, LED lighting, and telecommunications equipment. Its robust ratings and efficient switching performance make the FCH125N65S3R0-F155 MOSFET suitable for high power dissipation scenarios up to 181 watts.

Maximum continuous drain current of 24 A supports demanding power loads. Maximum drain-source voltage of 650 V ensures high-voltage applications compatibility. Low typical gate charge (46 nC) reduces switching losses and EMI.

TO-247 package offers convenient through-hole mounting. Wide operating temperature range from -55°C to 150°C allows versatile deployment. Low Rds(on) of 125 mΩ improves energy efficiency. Forward voltage of 1.2 V ensures improved conduction performance.

Internal gate resistance of 0.5 Ω enhances switching stability. SuperFET III technology provides superior performance and reliability. Maximum power dissipation rated at 181 W for robust operation. Explore our comprehensive selection of semiconductor products on EnvMart for your high-performance electronic designs and applications.