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Vishay Silicon Junction Switching Diode Single 2 A Forward Current 200 V DO-214AA MURS120-E3/52T
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 2.24mm |
| Length | 4.57mm |
| Model | MURS120-E3/52T |
| Width | 3.94mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | DO-214AA |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Diode Configuration | Single |
| Peak Non-Repetitive Forward Surge Current Ifsm | 40A |
| Maximum Forward Voltage Vf | 875mV |
| Peak Reverse Recovery Time trr | 35ns |
| Maximum Forward Current If | 2A |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 200V |
Key Features
- Single silicon junction diode for switching and rectification applications.
- Maximum forward current of 2 amperes ensures robust conduction capability.
- Peak reverse repetitive voltage rating of 200 volts for reliable blocking performance.
- Compact surface mount DO-214AA package with 2 pins for efficient PCB mounting.
- Fast reverse recovery time of 35 nanoseconds suitable for high-frequency circuits.
- Maximum forward voltage drop of 0.875 volts minimizes power loss during conduction.
- Wide operating temperature range from -65°C to 175°C supports harsh environments.
- High surge current capability up to 40 amperes for transient conditions.
Product Description
Vishay MURS120-E3/52T silicon junction switching diode is designed for applications requiring efficient, fast switching and rectification in electronic circuits. Rated at a maximum forward current of 2 amperes and peak reverse voltage of 200 volts, this single diode in DO-214AA surface mount package is ideal for power management, telecommunications, and consumer electronics.
The diode features an ultrafast recovery time of 35 ns, reducing switching losses and enabling performance in high-frequency switching mode converters and inverters. Its maximum forward voltage drop of 0.875 V enhances circuit efficiency by minimizing conduction losses.
With a robust operating temperature range from -65 to +175°C, the diode is capable of withstanding harsh industrial, commercial, and laboratory environments. A high surge current rating of 40 A allows it to handle transient overload conditions reliably.
The compact DO-214AA package measuring 4.57 mm length, 3.94 mm width, and 2.24 mm height provides a small footprint suitable for automated surface mount assembly. The device is constructed for durability and consistency, making it well-suited for industrial, telecommunications, and power applications.
Single silicon junction diode for switching and rectification. 2 A forward current and 200 V peak reverse voltage ratings. Fast reverse recovery time of 35 ns. Compact 2-pin DO-214AA surface mount package. Operational from -65°C to 175°C temperature range.
High surge tolerance up to 40 A. Low forward voltage drop of 0.875 V for efficiency. Produced for high-frequency switching mode converters and inverters. Perfect for industrial, commercial, and telecommunication use. Manufactured in China with quality assurance.
Explore Vishay silicon junction diodes and other semiconductor components on EnvMart for your electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum forward current rating of this diode is 2 amperes.
The peak reverse repetitive voltage rating is 200 volts.
It comes in a compact DO-214AA surface mount package.
The reverse recovery time is 35 nanoseconds, making it suitable for high-frequency applications.
The diode operates within a temperature range of -65°C to 175°C.
It can handle a peak non-repetitive forward surge current of up to 40 amperes.
The dimensions are 4.57 mm in length, 3.94 mm in width, and 2.24 mm in height.
The maximum forward voltage drop is 0.875 volts.
This diode is suitable for power management, telecommunications, and consumer electronics applications.
It has a single diode configuration.
It is manufactured in China.
The mounting type is surface mount, which is suitable for automated assembly.
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