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Vishay 30 V 3 A Schottky Diode, 2-Pin Through Hole DO-201AD Package 1N5821-E3/54
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 5.3mm |
| Brand | Vishay |
| Length | 9.5mm |
| Model | 1N5821-E3/54 |
| Mount Type | Through Hole |
| Series | 1N5821 |
| Maximum Operating Temperature | 125°C |
| Package Type | DO-201AD |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 3A |
| Peak Reverse Repetitive Voltage Vrrm | 30V |
| Diode Configuration | Single |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 20mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 80A |
| Maximum Forward Voltage Vf | 500mV |
Key Features
- Maximum continuous forward current of 3 amperes for robust performance.
- Peak reverse repetitive voltage rating of 30 volts ensures effective blocking capability.
- Low forward voltage drop of 500 millivolts minimizes energy loss during conduction.
- Operates reliably within a temperature range of -65°C to 125°C.
- Compact package with 9.5 mm length and 5.3 mm diameter for space-constrained designs.
- Peak non-repetitive surge current up to 80 amperes for transient conditions.
- Two pin single diode configuration designed for through hole mounting.
- Manufactured in China adhering to rigorous industry quality standards.
Product Description
Vishay 1N5821-E3/54 is a high-performance Schottky diode designed with a 2-pin DO-201AD through hole package. This discrete semiconductor component supports a maximum continuous forward current of 3 A and can block peak reverse repetitive voltages up to 30 V. Featuring a low forward voltage drop of 500 mV, it offers efficient conduction with minimal power loss, making it highly suitable for power rectification in switching power supplies and high-frequency applications.
Operating reliably over a temperature range from -65°C to 125°C ensures the diode’s robustness in industrial, automotive, and consumer electronics environments. The small form factor, with a length of 9.5 mm and diameter of 5.3 mm, enables its use in compact circuit designs where space-saving is critical. The diode exhibits a peak non-repetitive forward surge current rating of 80 A, providing resilience during transient overcurrent events.
Manufactured in China under Vishay’s quality control, the device does not carry specific certifications but meets industry expectations for Schottky rectifiers. Its single diode configuration and through hole mount type enhance ease of installation and reliable mechanical connection.
Maximum continuous forward current of 3 A. Peak reverse repetitive voltage of 30 V. Forward voltage drop of 500 mV. Operating temperature range between -65°C and 125°C. Package type: DO-201AD, through hole mounted. Length of 9.5 mm and diameter of 5.3 mm.
Peak non-repetitive forward surge current of 80 A. Two-pin single diode configuration.
This Vishay Schottky diode is widely used in power rectification, voltage clamping, and fast switching applications in industrial, automotive, and electronic manufacturing sectors. Its compact size and superior electrical characteristics make it a valuable component for engineers seeking efficient and dependable semiconductor solutions.
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Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current of this model is 3 amperes.
It has a peak reverse repetitive voltage rating of 30 volts.
The forward voltage drop is 500 millivolts, which minimizes energy loss during conduction.
This diode operates reliably within a temperature range of -65°C to 125°C.
It is packaged in a DO-201AD type and is designed for through hole mounting.
The diode has a length of 9.5 mm and a diameter of 5.3 mm.
The peak non-repetitive forward surge current rating is 80 amperes.
This model features a two-pin single diode configuration.
This component is a Schottky rectifier, suitable for efficient conduction.
The peak reverse current is rated at 20 milliamperes.
It is commonly used in power rectification, voltage clamping, and fast switching applications.
This diode is manufactured in China.
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