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STMicroelectronics N-Channel IGBT 30 A 420 V 3-Pin TO-263 Surface Mount Automotive Grade AEC-Q101 STGB18N40LZT4
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 4.6mm |
| Length | 10.4mm |
| Model | STGB18N40LZT4 |
| Width | 9.35mm |
| Mount Type | Surface |
| Series | Automotive Grade |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 30A |
| Maximum Collector Emitter Voltage Vceo | 420V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Power Dissipation Pd | 150W |
| Maximum Gate Emitter Voltage VGEO | 16 V |
Key Features
- Rated for a maximum continuous collector current of 30 A.
- Maximum collector emitter voltage rating is 420 V for robust performance.
- Power dissipation capability up to 150 W.
- Encapsulated in a compact TO-263 package suitable for surface mount.
- Features a 3-pin configuration optimized for automotive grade applications.
- Complies with AEC-Q101 automotive standard ensuring high reliability.
- Operating temperature range from -55°C to +175°C for wide environmental adaptability.
- Switching speed up to 1 MHz for efficient power control.
Product Description
STMicroelectronics STGB18N40LZT4 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for power semiconductor applications requiring high efficiency and rapid switching capabilities. It achieves this by combining the ease of gate control from MOSFET technology with the high-current and low-saturation voltage characteristics of bipolar transistors in a single device.
Constructed in a 3-pin TO-263 surface mount package, this automotive grade component meets AEC-Q101 standards, ensuring robustness and reliability for automotive and industrial power electronics applications.
Key electrical specifications include a maximum continuous collector current of 30 A and a maximum collector emitter voltage of 420 V. Its maximum power dissipation of 150 W allows for sustained operation under demanding conditions, with a switching speed capability reaching up to 1 MHz, suitable for high-frequency switching applications.
The device supports an operating temperature range from -55°C to 175°C, making it adaptable for harsh environments. With a maximum gate emitter voltage of 16 V and maximal collector emitter saturation voltage of 1.7 V, it ensures precise and efficient switching control.
Physical dimensions are compact with a length of 10.4 mm, width of 9.35 mm, and height of 4.6 mm, facilitating integration into densely populated circuit boards. The surface mount TO-263 package enables efficient thermal management and ease of assembly.
Rated for 30 A collector current. Maximum voltage rating of 420 V. Sustains power dissipation of 150 W. 3-pin TO-263 surface mount package. Automotive grade compliant to AEC-Q101. Thermal operating range from -55°C to 175°C.
High switching frequency up to 1 MHz. Maximum gate emitter voltage of 16 V. Compact dimensions suitable for dense layouts.
STGB18N40LZT4 IGBTs from STMicroelectronics are suitable for use in industrial, automotive, and power electronics applications including motor drives, inverters, and switched-mode power supplies. They offer reliability, performance efficiency, and ease of integration in semiconductor discrete solutions.
For more STMicroelectronics semiconductor products and automotive grade IGBTs, explore the extensive catalog at EnvMart.
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Frequently Asked Questions
The maximum continuous collector current for this IGBT is 30 A.
The maximum collector emitter voltage rating is 420 V.
It has a power dissipation capability of up to 150 W.
This model can achieve a switching speed of up to 1 MHz.
The dimensions of the TO-263 package are 10.4 mm in length, 9.35 mm in width, and 4.6 mm in height.
The operating temperature range is from -55°C to 175°C.
It complies with the AEC-Q101 automotive standard.
This IGBT features a 3-pin configuration.
The maximum gate emitter voltage is 16 V.
The maximum collector emitter saturation voltage is 1.7 V.
This IGBT is suitable for industrial, automotive, and power electronics applications including motor drives, inverters, and switched-mode power supplies.
The country of origin for this component is India.
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