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ROHM N-Channel Power MOSFET 20 A 650 V TO-220FM Package Low On-Resistance Fast Switching R6520ENX
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | ROHM |
| Height | 15.4mm |
| Length | 10.3mm |
| Model | R6520ENX |
| Width | 4.8mm |
| Mount Type | Through Hole |
| Series | R6520ENX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220FM |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 650V |
| Maximum Drain Source Resistance Rds | 200mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 68W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | 30V |
| Forward Voltage Vf | 1.5V |
Key Features
- The device offers low on-resistance enabling efficient power switching.
- Fast switching speed suitable for high-frequency applications.
- Designed for parallel use with Pb-free plating for environmental compliance.
- Maximum power dissipation rated at 68 W supports robust thermal performance.
- Wide operating temperature range from -55°C to 150°C ensures reliable operation in harsh environments.
- Enhancement channel mode with 200 mΩ maximum drain source resistance minimizes conduction losses.
- Compact dimensions of 15.4 mm height, 10.3 mm length, and 4.8 mm width for space-efficient PCB layouts.
- Typical gate charge of 61 nC at Vgs enables fast switching transitions.
Product Description
ROHM R6520ENX is a high-performance N-Channel Power MOSFET designed for efficient switching applications that demand low on-resistance and fast switching speed. Rated for a maximum continuous drain current of 20 A and a maximum drain source voltage of 650 V, this device ensures reliable operation in various power electronics circuits.
The MOSFET utilizes an enhancement channel mode, featuring a maximum drain source resistance of 200 mΩ which reduces conduction losses and improves energy efficiency. It supports power dissipation up to 68 W, allowing it to handle significant thermal loads in demanding industrial and commercial applications.
Its package type is TO-220FM with a through-hole mount style and 3 pins, facilitating straightforward installation in many printed circuit board designs. The device dimensions (15.4 mm height, 10.3 mm length, 4.8 mm width) contribute to its compact footprint.
The gate characteristics with a maximum gate source voltage of 30 V and typical gate charge of 61 nC enhance switching speed and protect the device from voltage transients. This MOSFET operates across a wide temperature range from -55°C to 150°C, suitable for harsh industrial environments including power management systems, motor drives, and automotive electronics, although it does not carry automotive certification.
Manufactured in Japan, this Pb-free plated component meets quality and environmental compliance standards. It is ideal for industrial, electronics assembly, HVAC, and manufacturing applications requiring reliable power switching solutions.
Low on-resistance supports efficient power use. Fast switching speed enables high-frequency operation. Robust power dissipation of 68 W for demanding thermal conditions. Wide operating temperature range from -55°C to 150°C.
Compact TO-220FM package with 3-pin through-hole mount. Typical gate charge of 61 nC ensures fast switching transitions. Maximum drain source voltage rating of 650 V suitable for high-voltage circuits. Environmentally compliant Pb-free plating.
Reliable Japanese manufacture quality. Explore more power semiconductor devices and MOSFET solutions at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 A.
The maximum drain source voltage rating is 650 V.
It has a maximum drain source resistance of 200 mΩ, which helps minimize conduction losses.
This device supports a maximum power dissipation of 68 W, allowing it to handle significant thermal loads.
The dimensions are 15.4 mm in height, 10.3 mm in length, and 4.8 mm in width.
The typical gate charge at Vgs is 61 nC, which facilitates fast switching transitions.
It operates within a wide temperature range from -55°C to 150°C.
This model features a through-hole mount style with 3 pins.
The maximum gate source voltage is 30 V.
It is suitable for applications in power management systems, motor drives, and various industrial electronics.
This product is manufactured in Japan.
It utilizes an enhancement channel mode.
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