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Wolfspeed N-Channel Enhancement MOSFET, 31 A Drain Current, 1200 V Drain Source Voltage, TO-247 3-Pin Package C2M0080120D
Specifications
| Country of Origin | China |
|---|---|
| Brand | Wolfspeed |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | C2M0080120D |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 31A |
| Maximum Drain Source Voltage Vds | 1200V |
| Maximum Drain Source Resistance Rds | 208mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 208W |
| Typical Gate Charge Qg @ Vgs | 49.2nC |
| Maximum Gate Source Voltage Vgs | -10, +25V |
| Forward Voltage Vf | 4.3V |
Key Features
- Utilizes enhancement-mode N-channel SiC technology for efficient switching.
- Features a maximum drain-source resistance of 208 milliohms for low conduction losses.
- Capable of high-speed switching with a typical gate charge of 49.2 nC at Vgs.
- Supports operation across a temperature range from -55°C to 150°C.
- Designed with a forward voltage of 4.3 V and maximum power dissipation of 208 W.
- Through-hole mount type enables easy PCB integration and mechanical stability.
- Compact TO-247 package dimensions of 21.1 mm height, 16.13 mm length, and 5.21 mm width.
- Latch-up resistant operation ensures reliability in demanding industrial applications.
Product Description
Wolfspeed C2M0080120D is a high-performance N-Channel Enhancement Mode Silicon Carbide (SiC) MOSFET designed for robust and efficient power switching applications.
With a maximum continuous drain current of 31 A and a drain-source voltage rating of 1200 V, this device supports high voltage and current operations, suitable for industrial, automotive, renewable energy, and power conversion systems.
Packaged in a 3-pin TO-247 through-hole package, it offers mechanical durability and ease of installation. The device exhibits low gate charge of 49.2 nC, allowing high switching frequencies and improved system efficiency, while its on-resistance of 208 mΩ reduces conduction losses.
It is capable of operating at temperatures ranging from -55°C up to a maximum of 150°C, ensuring reliability under harsh operating conditions. The MOSFET includes overvoltage tolerance with a maximum gate-source voltage ranging from -10 V to +25 V and features a forward voltage of 4.3 V.
Its robust design enhances latch-up resistance, improving durability in demanding environments. This Wolfspeed SiC MOSFET is ideal for applications in industrial motor drives, power supplies, photovoltaics, electric vehicles, and other power electronics requiring efficient energy management.
Utilizes enhancement-mode N-channel SiC semiconductor technology for high efficiency. Supports up to 31 A continuous drain current and 1200 V drain-source voltage. Compact TO-247 package with 3 pins and through-hole mounting.
Low gate charge of 49.2 nC enables faster switching speeds. Wide operating temperature range from -55°C to 150°C. Maximum power dissipation of 208 W for robust power handling. Forward voltage of 4.3 V to optimize conduction performance.
Manufactured in China by Wolfspeed with high quality standards.
Environmentally conscious design conforms to RoHS standards. This MOSFET is part of Wolfspeed's Silicon Carbide Power MOSFET family, offering superior power density and thermal performance compared to silicon alternatives. It is suitable for laboratory, industrial, HVAC, automotive, and renewable energy power management solutions.
Explore similar Wolfspeed semiconductor components and power devices in our extensive catalog for comprehensive power electronics solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 31 A.
This MOSFET has a maximum drain-source voltage rating of 1200 V.
The typical gate charge at Vgs for this unit is 49.2 nC.
The maximum power dissipation for this MOSFET is 208 W.
The TO-247 package dimensions are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.
This model operates across a temperature range from -55°C to 150°C.
The maximum gate-source voltage ranges from -10 V to +25 V.
This MOSFET uses a through-hole mount type for easy PCB integration.
The forward voltage of this model is 4.3 V.
The maximum drain-source resistance for this device is 208 milliohms.
This MOSFET is suitable for applications in industrial motor drives, power supplies, photovoltaics, and electric vehicles.
The channel type of this model is N-channel enhancement mode.
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