onsemi PowerTrench N-Channel MOSFET 80 A 60 V Enhancement Mode 3-Pin TO-263 FDB050AN06A0

onsemi FDB050AN06A0 is a PowerTrench N-Channel MOSFET designed for power management, switching, and amplification in industrial and electronic applications requiring high current handling capability.

This MOSFET supports a maximum continuous drain current of 80 amperes and a maximum drain-source voltage rating of 60 volts, delivered in a robust 3-pin TO-263 surface-mount package.

The device operates in enhancement mode with a low maximum drain-source resistance of 11 milliohms, enhancing efficiency and minimizing conduction losses. It is capable of handling up to 245 watts of power dissipation, with a typical gate charge of 61 nanocoulombs, allowing for fast switching operations in power electronics.

The device is rated for operating temperatures ranging from -55°C to +175°C, ensuring reliable performance in harsh industrial environments. Physically, it measures approximately 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height, supporting compact and efficient PCB layouts.

This MOSFET is suitable for applications in industrial power supplies, motor drivers, HVAC systems, and other commercial electronic devices where efficient power control is necessary.

Designed for surface mount applications with 3-pin TO-263 packaging. High continuous drain current capacity of 80 A at 60 V. Low Rds(on) of 11 mΩ to reduce conduction losses. Wide operating temperature range from -55°C to 175°C.

Suitable for power dissipation of 245 W. Compact dimensions favor high-density assemblies. Typical gate charge of 61 nC for rapid switching. No automotive-specific certifications. Explore more on semi MOSFET products and power management components at EnvMart for industrial and commercial electronics solutions.