onsemi UniFET N-Channel MOSFET 6.2A 250V Enhancement Mode 3-Pin TO-252 FDD7N25LZTM

onsemi FDD7N25LZTM is a UniFET™ N-Channel MOSFET designed for high voltage switching and power applications. It provides reliable performance with a maximum continuous drain current of 6.2 A and a drain-source voltage rating of 250 V. The device operates in enhancement mode and is housed in a 3-pin TO-252 surface-mount package, ensuring compactness and ease of integration in modern electronic circuits.

This MOSFET features a low on-state resistance of 570 milliohms, which reduces power losses during operation, making it highly efficient for switching power converters, power factor correction circuits, and electronic lamp ballasts. The maximum power dissipation capability is 56 W, allowing it to handle significant power without overheating.

The operating temperature range spans from -55°C to 150°C, ensuring durability and stable operation across various industrial, automotive (non-automotive rated), and consumer electronics environments. The device includes an internal gate-source ESD diode, contributing to high surge voltage tolerance surpassing 2000 V HBM standards. This characteristic improves circuit robustness against electrostatic discharge events.

Compact physical dimensions (6.73 mm length, 6.22 mm width, and 2.39 mm height) support high-density PCB layouts. Typical gate charge of 12 nC at 12 V gate voltage supports efficient switching with minimal delays, suitable for high-frequency power switching applications.

onsemi’s UniFET family represents Fairchild Semiconductor’s high voltage MOSFET line, offering superior conduction and switching performance. The FDD7N25LZTM is ideal for integration in power management systems, flat panel displays, ATX power supplies, and other power electronics requiring reliable, efficient MOSFET devices.

High continuous drain current of 6.2 A enables robust power handling. Wide operating temperature range of -55°C to 150°C for durability. Low on-state resistance of 570 mΩ improves energy efficiency. 3-pin TO-252 surface-mount package for compact design.

Maximum power dissipation of 56 W allows high load applications. Internal gate-source ESD diode withstands surges over 2000 V HBM. Typical gate charge 12 nC supports fast switching speeds. Dimensions optimized for space-saving PCB layouts.

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