onsemi PowerTrench Type P-Channel MOSFET 6.7 A 40 V Enhancement 3-Pin TO-252 FDD4243

onsemi FDD4243 is a PowerTrench Type P-Channel MOSFET optimized for surface mounting in electronic circuits, with a maximum continuous drain current of 6.7 A and a drain source voltage rating of 40 V. The device operates in enhancement mode, making it ideal for switching and amplification in power management and automotive applications.

The TO-252 package enhances thermal dissipation, allowing maximum power dissipation of 42 W, and supports operation in a wide ambient temperature range from -55°C to 150°C. Its low drain source resistance (69 mΩ) improves efficiency and reduces heat generation in circuits.

The FDD4243 provides a typical gate charge of 21 nC at gate-source voltage, enabling fast switching performance. Its maximum gate source voltage of -20 V to +20 V offers robust gate protection from transient voltages.

With a forward voltage of 0.86 V, this MOSFET maintains low conduction loss, making it attractive for power-sensitive designs. The compact physical dimensions (6.73 mm length × 6.22 mm width × 2.39 mm height) facilitate integration into space-constrained electronic assemblies.

Applications for the onsemi FDD4243 include industrial power supplies, automotive electronic systems, and general purpose switching circuits within the electronics manufacturing and repair sectors. It is particularly suitable for designs requiring efficient power switching under demanding environmental conditions.

This MOSFET features a TO-252 package suitable for compact PCB layouts. It operates in enhancement mode with a maximum power dissipation of 42 W. Designed to perform reliably in temperature ranges from -55°C up to 150°C.

The device offers a low maximum drain source resistance of 69 mΩ, enhancing efficiency. Typical gate charge of 21 nC at Vgs makes it suitable for fast switching applications. Maximum gate source voltage is rated at -20 V to +20 V to protect the gate from voltage spikes.

Forward voltage is 0.86 V, ensuring low conduction losses in power circuits. Dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height enable compact system design. Explore additional onsemi MOSFETs and semiconductor devices in the Electronics & Electricals category at EnvMart for efficient power management solutions.