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onsemi PowerTrench Type P-Channel MOSFET, 8.4 A, 40 V, Enhancement Mode, Surface Mount, 3-Pin TO-252 Package FDD4685
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD4685 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhancement mode device ensuring efficient switching performance.
- Maximum power dissipation of 69 watts for reliable thermal handling.
- Low maximum drain source resistance of 42 milliohms lowering conduction losses.
- Wide operating temperature range from -55°C to 150°C for robust application.
- Typical gate charge of 19 nC improving switching efficiency.
- Supports gate-source voltage range of -20 V to +20 V for flexible drive options.
- Compact dimensions of 6.73 mm (L) x 6.22 mm (W) x 2.39 mm (H) suited for dense PCB layouts.
- Forward voltage of -1.2 V ensuring minimal voltage drop during conduction.
Product Description
onsemi FDD4685 PowerTrench Type P-Channel MOSFET is an advanced semiconductor device from onsemi designed for high-efficiency electronic switching in power management applications. Featuring a maximum continuous drain current of 8.4 A and a drain-source voltage rating of 40 V, this MOSFET is optimized for surface mounting with a 3-pin TO-252 package. It operates in enhancement mode, delivering reliable and efficient switching performance.
Constructed to withstand demanding conditions, the FDD4685 supports a power dissipation of up to 69 W and maintains functionality within a wide temperature range from -55°C to 150°C. Its low maximum drain source resistance of 42 mΩ reduces losses and improves overall circuit efficiency.
The device has a typical gate charge of 19 nC, enabling rapid switching speeds while minimizing energy consumption. Its maximum gate-source voltage range of -20 V to +20 V provides versatile control possibilities in various electronic circuits. Physical dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height make it ideal for densely packed electronic designs.
Commonly employed in industrial power management, automotive electronics, and consumer electronic devices, this MOSFET facilitates efficient power regulation. The forward voltage of -1.2 V ensures reduced voltage drop and heat generation, enhancing device reliability.
This product does not carry specific automotive standards or approvals but is manufactured to meet high quality and reliability criteria expected from onsemi products. It supports a range of industrial and commercial applications where robust, compact, and efficient switching components are required.
Enhancement mode ensuring efficient MOSFET switching. 8.4 A continuous drain current for moderate power applications. Surface mount 3-pin TO-252 packaging for compact PCBs. Wide operating temperature range from -55°C up to 150°C.
Low on-resistance (42 mΩ) minimizes conduction losses. Typical gate charge of 19 nC supports fast switching. Gate-source voltage range of -20 to +20 V for versatile drive. Power dissipation up to 69 W to handle thermal demands.
Explore more semiconductor components and MOSFETs in the onsemi category through EnvMart for industrial and electronic design applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 8.4 A.
It has a maximum drain-source voltage rating of 40 V.
This model is packaged in a 3-pin TO-252 configuration.
The typical gate charge is 19 nC, which supports efficient switching.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It can handle a maximum power dissipation of 69 W.
The gate-source voltage range is from -20 V to +20 V.
The maximum operating temperature is 150°C.
The minimum operating temperature is -55°C.
The maximum drain-source resistance is 42 mΩ.
This MOSFET is commonly employed in industrial power management, automotive electronics, and consumer electronic devices.
It features a P-Channel type design, operating in enhancement mode.
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