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onsemi PowerTrench Type P-Channel MOSFET, 11 A, 30 V Enhancement, 3-Pin TO-252 FDD6685
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD6685 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 30mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1.2V |
Key Features
- Offers a maximum continuous drain current of 11 amperes for efficient power handling.
- Supports a maximum drain-to-source voltage of 30 volts suitable for low-voltage power circuits.
- Features a low Rds(on) of 30 milliohms that reduces conduction losses.
- Designed with enhancement mode channel in a PowerTrench series optimized for surface mount applications.
- Includes a typical gate charge of 17 nanocoulombs enabling fast switching speeds.
- Compatible with automotive standards including AEC-Q101 certification.
- Operates reliably across a wide temperature range from -55°C to 175°C.
- 3-pin configuration housed in a durable TO-252 surface mount package.
Product Description
onsemi FDD6685 PowerTrench Type P-Channel MOSFET is a surface mount transistor designed for demanding power switching applications requiring efficient and reliable performance. It supports a continuous drain current of 11 A and a drain-source voltage of 30 V, making it ideal for low-voltage DC power management and motor driver circuits.
This enhancement mode device uses onsemi's PowerTrench technology, providing reduced gate charge and low Rds(on) to maximize system efficiency and reduce thermal dissipation. The compact TO-252 3-pin package allows high power density and ease of PCB assembly in industrial and automotive electronic modules.
Typical gate charge of 17 nC contributes to fast switching capability, supporting synchronous rectification and high-frequency operation. The transistor includes a robust maximum power dissipation of 52 W and complies with automotive AEC-Q101 standards, ensuring suitability for vehicle electronics environments.
Its operating temperature range from -55°C to 175°C supports harsh industrial and commercial conditions. The device's shielded-gate structure ensures stable charge balance, improving reliability and extending device lifetime.
Maximum continuous drain current of 11 amperes for high power applications. Drain-source voltage capability of 30 volts for low voltage designs. Low on-resistance of 30 milliohms to minimize conduction losses. Fast switching enabled by a gate charge of 17 nanocoulombs.
Automotive-grade qualification with AEC-Q101 compliance. Wide temperature operation from -55°C to 175°C. Compact 3-pin TO-252 surface mount package.
This PowerTrench MOSFET is suitable for industrial power supplies, automotive electronics, DC motor controls, and general-purpose switching in power management circuits. The advanced shielded-gate structure improves switching efficiency and reduces the need for additional snubber circuits, simplifying design and lowering overall system cost.
Explore the broad selection of onsemi MOSFETs and other power semiconductors in the EnvMart catalog, designed for diverse electronic and industrial applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 11 amperes.
It supports a maximum drain-to-source voltage of 30 volts.
The typical gate charge is 17 nanocoulombs, enabling fast switching speeds.
The dimensions of the TO-252 package are 6.73mm in length, 6.22mm in width, and 2.39mm in height.
It operates reliably across a wide temperature range from -55°C to 175°C.
The maximum power dissipation is 52 watts.
This model complies with the automotive AEC-Q101 standard.
The device features a low Rds(on) of 30 milliohms, which reduces conduction losses.
It has a 3-pin configuration.
This device uses an enhancement mode channel type.
The maximum gate-source voltage is -25V to +25V.
This MOSFET is suitable for industrial power supplies, automotive electronics, DC motor controls, and general-purpose switching in power management circuits.
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