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onsemi PowerTrench Type P-Channel MOSFET, 6.7 A, 40 V, Enhancement Mode, 3-Pin TO-252 FDD4243
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD4243 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.7A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 69mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.86V |
Key Features
- This MOSFET features enhancement mode channel operation for reliable switching.
- It has a low continuous drain-source resistance of 69 milliohms which ensures efficient power dissipation.
- The device supports a maximum power dissipation of 42 watts for high-performance applications.
- It operates over a wide temperature range from -55°C to +150°C, suitable for demanding environments.
- The typical gate charge is 21 nanocoulombs at Vgs, enabling fast switching speeds.
- The maximum gate-source voltage rating is ±20 volts for flexible gate drive conditions.
- Forward voltage drop of 0.86 V optimizes conduction efficiency in circuits.
Product Description
onsemi FDD4243 is a PowerTrench Type P-Channel MOSFET designed for surface mount applications requiring robust performance and efficient switching. Equipped with a maximum continuous drain current of 6.7 amperes and a maximum drain-source voltage of 40 volts, this enhancement mode MOSFET offers reliable operation and power handling in compact electronics.
The device is housed in a 3-pin TO-252 package with precise physical dimensions (6.73 mm length, 6.22 mm width, 2.39 mm height), ideal for PCB space constraints common in power management circuits.
Characterized by a low maximum drain-source resistance of 69 milliohms, FDD4243 minimizes conduction losses and enhances power efficiency. The typical gate charge of 21 nanocoulombs and gate-source voltage rating ±20 V support rapid switching and varied gate drive conditions.
Thermal performance is strong, with the MOSFET supporting power dissipation up to 42 watts and operating temperature range from -55°C to +150°C, making it suitable for industrial, automotive, and commercial electronic systems.
The low forward voltage drop of 0.86 volts contributes to reduced heat generation and enhanced energy efficiency in power circuits. This product is ideal for use in power management ICs, DC/DC converters, load switches, and other semiconductor switching applications.
The enhancement mode operation facilitates easy integration into existing electronic systems requiring P-Channel MOSFETs with high reliability.
Explore detailed technical specifications and supporting documents for precise design integration. Browse the onsemi range of MOSFETs on EnvMart for additional semiconductor components and power management solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6.7 amperes.
This MOSFET has a maximum drain-source voltage rating of 40 volts.
The typical gate charge is 21 nanocoulombs at Vgs.
It supports a maximum power dissipation of 42 watts.
The operating temperature range is from -55°C to +150°C.
This model is housed in a 3-pin TO-252 package.
The forward voltage drop is 0.86 volts.
The maximum drain-source resistance is 69 milliohms.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It features a Type P channel.
The maximum gate-source voltage rating is ±20 volts.
This model is suitable for power management ICs, DC/DC converters, and load switches.
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