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onsemi PowerTrench Type P-Channel MOSFET 20 V 4.5 A Enhancement Mode 6-Pin SOT-23 FDC640P
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 3mm |
| Model | FDC640P |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 80mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 9nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
Key Features
- Enhanced mode P-channel MOSFET with PowerTrench technology.
- Small package size with surface mount SOT-23, ideal for compact electronic designs.
- Maximum power dissipation of 1.6 W supports efficient thermal management.
- Low typical gate charge of 9 nC for improved switching performance.
- Wide operating temperature range from -55°C to +150°C for reliable industrial applications.
- Maximum drain source resistance of 80 mΩ ensures low conduction losses.
- Six pins allow for flexible circuit integration and ease of mounting.
- Gate-source voltage tolerance up to ±12 V protects against voltage spikes.
Product Description
The onsemi FDC640P PowerTrench Type P-Channel MOSFET is engineered for high efficiency switching with a maximum continuous drain current of 4.5 A and drain source voltage of 20 V. Housed in a compact 6-pin SOT-23 surface mount package, this enhancement mode device delivers excellent performance in a small form factor.
Using PowerTrench technology, the MOSFET offers a low gate charge of 9 nC and a very low figure of merit resulting in reduced switching losses, making it suitable for power-efficient designs in applications such as synchronous rectification in AC/DC power supplies, power management circuits, and signal switching.
The device features a maximum power dissipation of 1.6 W and can operate reliably between -55°C and 150°C, accommodating a wide range of industrial environments. The drain source resistance of 80 milliohms allows for reduced conduction losses, improving overall system efficiency.
Gate-source voltage rating of ±12 V ensures protection against moderate voltage surges. The soft body diode characteristic of the PowerTrench MOSFET eliminates the need for snubber circuits or allows replacement of MOSFETs rated for higher voltages.
This semiconductor component is ideal for use in industrial, commercial, and consumer electronic equipment requiring efficient power switching and management. The compact SOT-23 packaging facilitates easy PCB integration and surface mounting, saving board space.
Enhanced mode P-channel MOSFET with PowerTrench technology delivers high efficiency. Compact 6-pin SOT-23 package allows space-saving surface mount applications. Capable of 4.5 A continuous drain current at 20 V drain source voltage.
Low gate charge of 9 nC reduces switching power losses. Wide operating temperature range from -55°C to 150°C for industrial robustness. Maximum power dissipation rating of 1.6 W supports thermal reliability. Low drain source resistance of 80 mΩ improves conduction efficiency.
Gate-source voltage tolerance of ±12 V protects device integrity. Explore more semiconductor components and MOSFET devices in the Electronics & Electricals category at EnvMart for your industrial and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.5 A.
The maximum drain source voltage is 20 V.
The typical gate charge is 9 nC, which helps reduce switching power losses.
The maximum power dissipation rating is 1.6 W.
This model operates reliably between -55°C and 150°C.
The maximum drain source resistance is 80 mΩ, which improves conduction efficiency.
The FDC640P is housed in a compact 6-pin SOT-23 surface mount package.
This model has 6 pins, allowing for flexible circuit integration.
The gate-source voltage tolerance is up to ±12 V, which protects against voltage spikes.
The channel type is P-channel, specifically designed for enhancement mode operation.
This MOSFET is suitable for applications such as synchronous rectification in AC/DC power supplies and power management circuits.
The dimensions are 3 mm in length, 1.7 mm in width, and 1 mm in height.
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