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onsemi QFET N-Channel MOSFET, 2.8 A, 600 V Enhancement Mode, 3-Pin TO-252 Package FQD5N60CTM

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onsemi QFET N-Channel MOSFET, 2.8 A, 600 V Enhancement Mode, 3-Pin TO-252 Package FQD5N60CTM

Name: onsemi QFET N-Channel MOSFET, 2.8 A, 600 V Enhancement Mode, 3-Pin TO-252 Package FQD5N60CTM
Brand: onsemi
SKU: 243589
Price: 0.81 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	2.39mm
Length	6.73mm
Model	FQD5N60CTM
Width	6.22mm
Mount Type	Surface
Series	QFET
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	2.8A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	2.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	49W
Typical Gate Charge Qg @ Vgs	15nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.4V

Key Features

This device features enhancement mode channel operation with a maximum gate-source voltage of ±30 V.
It has a maximum drain-source resistance (Rds) of 2.5 Ω, ensuring low conduction loss.
The MOSFET supports a maximum power dissipation of 49 W and operates within -55°C to 150°C temperature range.
Designed for surface mount applications, it provides reliability in power circuits such as power supplies and DC-DC converters.
The typical gate charge is 15 nC at the specified gate-source voltage, allowing efficient switching performance.

Product Description

onsemi FQD5N60CTM is a QFET® N-Channel MOSFET transistor designed to support a continuous drain current of 2.8 A and a maximum drain-source voltage of 600 V. Packaged in a compact 3-pin TO-252 surface mount casing, this device suits a wide range of industrial and electronic applications that require efficient switching and power handling capabilities.

The device operates in enhancement mode and is engineered to handle a maximum drain-source resistance of 2.5 Ω, contributing to reduced on-state losses and improved energy efficiency. With a maximum gate-source voltage of ±30 V and a forward voltage of 1.4 V, it delivers reliable performance under demanding electrical conditions.

This MOSFET supports maximum power dissipation of 49 W and a wide operating temperature range from -55°C to 150°C, making it suitable for use in power supplies, power factor correction (PFC) circuits, DC-DC converters, lighting ballasts, and motion control systems in industrial, HVAC, manufacturing, and automation contexts.

The device's compact dimensions of 6.73 mm length, 6.22 mm width, and 2.39 mm height facilitate integration into dense electronic assemblies with surface mount technology. Its typical gate charge of 15 nC promotes fast switching and reduces switching losses, essential for high-frequency power applications.

Enhancement mode N-channel power MOSFET. Maximum continuous drain current: 2.8 A. Drain-source voltage rating of 600 V. Low on-resistance of 2.5 Ω for reduced conduction losses. Compact TO-252 surface mount package. Operating temperature range from -55°C to 150°C.

Maximum power dissipation of 49 W. Typical gate charge of 15 nC for efficient switching. It is designed to meet exacting industry standards but does not carry specific automotive certifications. The product condition is new and is made in India.

EnvMart offers this product for applications requiring robust power switching devices, suitable for industrial electronics, power management, and control systems. Explore the Electronics & Electricals category for additional MOSFETs and semiconductor components.