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onsemi QFET Type P-Channel MOSFET 1.33A 500V Enhancement Mode 3-Pin TO-252 FQD3P50TM
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FQD3P50TM |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | QFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.33A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 4.9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 50W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -5V |
Key Features
- Advanced QFET® planar MOSFET technology offers low on-resistance and switching losses.
- Surface mount TO-252 package enables compact PCB design.
- Maximum continuous drain current of 1.33 A for reliable power performance.
- Maximum drain-source voltage of 500 V for high-voltage applications.
- Maximum power dissipation of 50 W suitable for various power conversion tasks.
- Wide operating temperature range from -55°C to 150°C for harsh environments.
- Typical gate charge at Vgs is 18 nC for efficient switching.
- Maximum gate-source voltage rating of ±30 V ensures device robustness.
Product Description
onsemi FQD3P50TM QFET Type P-Channel MOSFET is a 3-pin TO-252 package enhancement mode transistor engineered for power electronics applications.
Featuring advanced QFET® planar MOSFET technology, it provides reduced on-state loss due to low drain-source resistance (4.9 Ω max) and minimized switching losses enabled by low gate charge and output capacitance. The device is suitable for surface mount applications requiring efficient power management in circuits such as power supplies, power factor correction, DC-DC converters, lighting ballasts, and motion control.
With a maximum continuous drain current of 1.33 A and voltage rating of 500 V, it reliably handles medium power load conditions. Its maximum power dissipation is rated at 50 W. The operating temperature range from -55°C to 150°C supports use in a wide range of industrial and commercial environments.
This MOSFET offers a typical gate charge of 18 nC at standard gate-source voltage and can withstand gate-source voltages of up to ±30 V, ensuring robustness under dynamic switching. Compact TO-252 package dimensions of 6.73 x 6.22 x 2.39 mm enable space-efficient PCB layouts.
Low on-resistance for efficient conduction. Enhanced switching performance due to low gate charge. Suitable for power supply and converter applications. Wide temperature tolerance for industrial environments. Compact surface mount TO-252 package.
This onsemi MOSFET FQD3P50TM is ideal for electronic component applications demanding reliable P-Channel power switching in industrial, commercial, and consumer electronics sectors. Explore more high-performance semiconductor devices in the Discrete Semiconductors category at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.33 A.
This MOSFET has a maximum drain-source voltage rating of 500 V.
It has a maximum power dissipation rating of 50 W, suitable for various power conversion tasks.
The typical gate charge at Vgs for this model is 18 nC.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The operating temperature range is from -55°C to 150°C, allowing use in harsh environments.
This model uses a surface mount configuration, which enables compact PCB design.
The maximum gate-source voltage rating for this MOSFET is ±30 V.
This device is a P-Channel MOSFET, designed for enhancement mode operation.
The maximum drain-source resistance for this model is 4.9 Ω.
It is suitable for applications such as power supplies, power factor correction, DC-DC converters, and lighting ballasts.
This model belongs to the QFET series of onsemi.
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