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onsemi QFET N-Channel MOSFET 18 A 100 V Enhancement Mode 3-Pin TO-220 FQPF33N10L
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.07mm |
| Length | 10.36mm |
| Model | FQPF33N10L |
| Width | 4.9mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 55mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 41W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Designed for through-hole mounting in electronic power applications.
- Max continuous drain current rating of 18 amperes ensures robust performance.
- Low Rds(on) resistance of 55 milliohms improves efficiency and reduces power loss.
- Maximum power dissipation capacity is 41 watts, suitable for high power circuits.
- Operating temperature range from -55°C to 175°C for reliability under diverse conditions.
- Channel type is N with enhancement mode, ideal for switching applications.
- Package dimensions include height 16.07 mm, width 4.9 mm, and length 10.36 mm.
- Includes advanced QFET technology for optimized switching speed and reduced gate charge (30 nC).
Product Description
onsemi FQPF33N10L is a QFET N-Channel MOSFET designed for power switching with a maximum continuous drain current of 18 amperes and a max drain-source voltage of 100 volts. It features a 3-pin TO-220 package for through-hole mounting, facilitating easy integration into power supply, DC-DC converters, power factor correction circuits, and other industrial electronic applications.
Using advanced QFET planar technology, this MOSFET offers low on-resistance (Rds(on)) of 55 milliohms and a typical gate charge of 30 nC, resulting in high efficiency and reduced switching losses. The device supports a maximum power dissipation of 41 watts and operates reliably in a temperature range from -55°C to 175°C, ensuring versatility in demanding environments.
The enhancement mode N-channel configuration provides quick switching and robust control characteristics ideal for power management, lighting ballasts, and motion control systems. Its gate-source voltage tolerance is ±20 volts, providing flexibility with gate drive voltages. Forward voltage is rated at 1.5 volts.
Physical dimensions of the TO-220 package include a height of 16.07 mm, width of 4.9 mm, and length of 10.36 mm, suitable for standard power components footprints. Designed for industrial and electronic power applications requiring efficient power switching.
Advanced QFET technology for optimized performance and reduced losses. Robust operation over a wide temperature range from -55°C to 175°C. Low on-state resistance ensures energy efficiency in circuits. Compatible with through-hole mounting in standard TO-220 package.
Ideal for use in DC-DC converters, power supplies, PFC, plasma display panels, lighting, and motion control. Compact size with 3-pin configuration simplifies circuit design. This onsemi MOSFET is a reliable component choice for semiconductor and electronic manufacturing sectors. Browse more semiconductor products and MOSFETs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current rating of this model is 18 amperes.
This MOSFET has a maximum drain-source voltage of 100 volts.
It features a low on-resistance (Rds(on)) of 55 milliohms, which helps improve efficiency.
The maximum power dissipation capacity is 41 watts, suitable for high power circuits.
It operates reliably within a temperature range from -55°C to 175°C.
This model is designed for through-hole mounting in electronic applications.
The package dimensions are height 16.07 mm, width 4.9 mm, and length 10.36 mm.
The typical gate charge is 30 nC at the specified gate-source voltage.
It features an N-channel configuration with enhancement mode, ideal for switching applications.
The forward voltage is rated at 1.5 volts.
The gate-source voltage tolerance is ±20 volts, providing flexibility with gate drive voltages.
It is suitable for use in DC-DC converters, power supplies, power factor correction circuits, and lighting applications.
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