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onsemi QFET Type P-Channel MOSFET, 19 A Continuous Drain Current, 60 V Maximum Drain Source Voltage, 120 W Power FQPF27P06
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 16.3mm |
| Length | 10.67mm |
| Model | FQPF27P06 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | QFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 70mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 120W |
| Typical Gate Charge Qg @ Vgs | 33nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -4V |
Key Features
- Designed for efficient power switching in electronic circuits.
- Features low on-resistance (70mΩ) to reduce power loss.
- Supports wide temperature range from -55°C to 175°C.
- Utilizes advanced QFET process technology for improved switching performance.
- Suitable for use in power supplies, DC-DC converters, lighting ballasts, and motion control.
- Through-hole mount type for reliable circuit board fixing.
- Compact dimensions with length 10.67 mm, width 4.7 mm, height 16.3 mm.
- Maximum gate-source voltage rating of -25 to +25 V for robust control.
Product Description
onsemi FQPF27P06 is a cutting-edge QFET Type P-Channel MOSFET offering enhanced performance for a wide spectrum of electronic power applications. This device features a maximum continuous drain current rating of 19 A and a maximum drain-source voltage of 60 V, enabling it to handle robust power switching duties reliably.
Encased in a 3-pin TO-220 through-hole package, it facilitates straightforward mounting and excellent thermal dissipation, supporting continuous power dissipation up to 120 W. Its operating temperature range from -55°C to 175°C ensures durability across demanding industrial and commercial environments.
The device incorporates Fairchild Semiconductor's advanced QFET planar MOSFET technology to reduce on-state losses through a low drain-source resistance of 70 mΩ and minimize switching losses via a typical gate charge of 33 nC. This translates to higher efficiency and lower heat generation in power regulation circuits.
Typical applications include power supplies, power factor correction circuits (PFC), DC-DC converters, plasma display panels, lighting ballasts, and precise motion control systems. The enhancement channel mode supports fast switching and precise control. The maximum gate-source voltage range of -25 to +25 V enables safe gate drive margins.
Physical dimensions are compact with a length of 10.67 mm, width of 4.7 mm, and height of 16.3 mm, making it suitable for PCB layouts requiring efficient space utilization. The forward voltage of -4 V is characteristic of P-Channel MOSFET operation, contributing to efficient conduction.
Designed for power switching with reduced on-state and switching losses. Broad temperature operation and rugged build ensure reliability. Simple through-hole mounting compatible with standard PCB techniques. Advanced QFET technology improves device figure of merit over traditional planar MOSFETs.
Ideal for industrial, commercial, and laboratory electronics applications. Explore more onsemi MOSFETs and semiconductor solutions at EnvMart for enhanced power efficiency across your projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
It has a maximum drain-source voltage rating of 60 V.
The FQPF27P06 can handle a maximum power dissipation of 120 W.
This model features a maximum drain-source resistance of 70 mΩ.
It operates within a temperature range of -55°C to 175°C.
This device uses a through-hole mount type for installation.
The dimensions are 10.67 mm in length, 4.7 mm in width, and 16.3 mm in height.
The typical gate charge at Vgs is 33 nC.
This model is suitable for applications such as power supplies, DC-DC converters, and lighting ballasts.
The maximum gate-source voltage rating is -25 to +25 V.
It utilizes a P-Channel type for its operation.
This model belongs to the QFET series of MOSFETs.
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