onsemi PowerTrench N-Channel MOSFET, 18.5 A Continuous Drain Current, 30 V Drain Source Voltage, 8-Pin SOIC Package FDS8813NZ

onsemi FDS8813NZ PowerTrench N-Channel MOSFET offers robust electronic performance with a continuous drain current rating of 18.5 A and a maximum drain-source voltage of 30 V, making it suitable for various power management applications. It employs advanced PowerTrench technology which enhances efficiency and thermal handling capabilities.

This MOSFET is housed in an 8-pin SOIC surface mount package, facilitating easy PCB layout and compact system designs. The device features a low drain-source resistance (Rds) of 4.5 milliohms, reducing conduction losses and improving overall system performance in power conversion, motor control, and switching circuits.

Operating reliably over a wide temperature range, from -55°C up to 150°C, the FDS8813NZ is ideal for demanding industrial, automotive, and consumer electronics including power supplies, DC/DC converters, and load switching applications.

The MOSFET’s typical gate charge of 55 nC at Vgs enables fast switching speeds, crucial for high-frequency switching power supplies and efficient power delivery. It is designed with an enhancement mode channel allowing precise control and performance optimization.

With a maximum power dissipation of 2.5 W, it manages thermal loads efficiently within compact electronic modules. The forward voltage drop of 1.2 V minimizes energy loss during conduction.

RoHS compliance guarantees adherence to environmental and safety standards, supporting sustainable electronics manufacturing.

Its compact dimensions (4.9 mm length, 3.9 mm width, 1.575 mm height) are optimized for integration into densely packed circuit boards, making it suitable for industrial, laboratory, manufacturing, automotive, and commercial electronic applications.

Designed with PowerTrench technology for efficient performance. Equipped with 8-pin SOIC package for compact surface mounting. Maximum drain-source resistance of 4.5 milli-ohms for low conduction losses. Operational temperature range from -55°C to 150°C ensuring reliability in various environments.

Enhanced gate charge of 55 nano-Coulombs at Vgs providing fast switching capabilities. Maximum power dissipation rating of 2.5 W for thermal management. Forward voltage of 1.2 V enabling efficient current flow. Compliance with RoHS standards for environmental safety.

Compact dimensions for integration in high-density electronics. Explore the Electronics & Electricals category at EnvMart for more semiconductor and MOSFET solutions by onsemi and other leading brands.