onsemi PowerTrench N-Channel MOSFET, 40A, 100V Enhancement Mode, 3-Pin TO-220 FDPF085N10A

onsemi FDPF085N10A PowerTrench N-Channel MOSFET is a high-performance discrete semiconductor designed for power electronics and switching applications in industrial, automotive, and consumer electronics sectors. This enhancement mode MOSFET features a maximum continuous drain current of 40 amperes and a maximum drain-source voltage rating of 100 volts, supporting demanding power management tasks.

The device is housed in a through-hole TO-220 package with three pins, facilitating secure mounting and heat dissipation in circuits. It operates efficiently with a low maximum drain-source resistance of 8.5 milliohms, which reduces conduction losses and enhances overall system efficiency.

This MOSFET is suitable for applications requiring high switching speed, thanks to its typical gate charge of 9.7 nanocoulombs, enabling rapid gate charging and discharging. The device supports a wide operating temperature range from -55°C to 175°C, ensuring durability in harsh environmental conditions.

With a maximum power dissipation of 33.3 watts, the FDPF085N10A is capable of handling moderate power levels while maintaining thermal stability. The gate-source voltage rating of ±20 volts ensures robust device protection against voltage spikes during switching operations.

Its compact physical dimensions, 16.07mm height, 10.36mm length, and 4.9mm width, allow for space-efficient designs in power electronic assemblies.

Applications include industrial motor control, power supplies, DC-DC converters, automotive electronic circuits, and other power management systems. This PowerTrench MOSFET from onsemi offers reliable performance and ease of integration for a variety of electronic projects and manufacturing needs.

Enhancement mode channel for efficient switching operation. 40A continuous drain current rating supports high power loads. 100V drain-source voltage rating suitable for medium voltage applications. Low Rds(on) of 8.5 milliohms reduces conduction losses.

TO-220 through-hole package enables effective heat dissipation. Wide operating temperature range from -55°C to 175°C for harsh environments. Gate charge of 9.7nC allows faster switching speeds. Maximum power dissipation at 33.3 watts enhances durability.

Compact size ideal for industrial and automotive uses. Explore more MOSFETs and semiconductor products at EnvMart for reliable electronic component sourcing and expert product support.