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onsemi PowerTrench Dual N/P-Channel MOSFET, 6.5 A, 20 V, Enhancement Mode, 8-Pin SOIC FDS9934C
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.575mm |
| Length | 4.9mm |
| Model | FDS9934C |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 6.5A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 90mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 6.2nC |
| Maximum Gate Source Voltage Vgs | -12, -10, +10, +12V |
| Forward Voltage Vf | 0.73V |
| Transistor Configuration | Isolated |
Key Features
- This device features an enhancement mode channel configuration that optimizes switching performance.
- It has a maximum drain-source resistance of 90 mΩ, providing efficient conduction.
- The MOSFET operates safely at a maximum power dissipation of 2 W and up to 150°C.
- Compact size with physical dimensions of 4.9 mm length, 3.9 mm width, and 1.575 mm height.
- The transistor configuration is isolated, including two elements per chip for versatile applications.
- Typical gate charge is 6.2 nC at Vgs, ensuring fast switching speeds.
- The device supports maximum gate-source voltage ratings of -12, -10, +10, and +12 V.
- Forward voltage is typically 0.73 V, contributing to efficient power usage.
Product Description
onsemi FDS9934C is a PowerTrench Dual N/P-Channel MOSFET designed to deliver high efficiency and power density for electronic applications. With a continuous drain current rating of 6.5 A and a voltage rating of 20 V, this MOSFET operates in enhancement mode within a compact 8-pin SOIC surface mount package.
The device incorporates advanced shielded-gate technology to achieve a low figure of merit (FOM), offering improved switching performance through reduced gate charge and reverse recovery charge. The soft reverse recovery body diode lowers losses and can eliminate the need for snubber circuits in synchronous rectification designs, making it ideal for AC/DC power supply circuits.
Physical dimensions are optimized for compact PCB layouts, measuring 4.9 mm in length, 3.9 mm in width, and 1.575 mm in height. It is rated for operation in harsh temperature environments, from -55°C up to 150°C maximum, enhancing reliability in industrial, commercial, and consumer electronics.
The transistor configuration is isolated with two elements per chip to support versatile circuit topologies. The device’s relatively low maximum Rds(on) of 90 mΩ and typical gate charge of 6.2 nC contribute to efficient power switching and minimal losses.
This MOSFET is suitable for a wide range of applications including motor control, power management, and DC/DC converters, specifically where compact size and high efficiency are critical.
Features a robust SOIC surface mount package with 8 pins for easy PCB integration. Dual channel N and P types provide flexible circuit design options. Advanced PowerTrench technology enhances system efficiency and power density.
Low gate charge and soft body diode support rapid switching and reduce electromagnetic interference. Wide operating temperature range from -55°C to 150°C. Ideal for industrial, automotive, power supply, and consumer electronics applications.
Isolated transistor configuration enhances reliability and design simplicity. Explore similar state-of-the-art MOSFET devices from onsemi and other leading semiconductor makers for your electronic component needs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current rating for this model is 6.5 A.
It has a maximum drain-source voltage rating of 20 V.
The dimensions are 4.9 mm in length, 3.9 mm in width, and 1.575 mm in height.
The maximum power dissipation is rated at 2 W.
This model operates within a temperature range of -55°C to 150°C.
The typical gate charge is 6.2 nC at Vgs.
The transistor configuration includes two elements per chip.
It uses a surface mount type, specifically in an 8-pin SOIC package.
The maximum gate-source voltage ratings are -12 V, -10 V, +10 V, and +12 V.
The maximum drain-source resistance is 90 mΩ.
This model supports dual channel types: N-channel and P-channel.
It is suitable for applications such as motor control, power management, and DC/DC converters.
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