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onsemi Isolated PowerTrench 2 N-Channel MOSFET, 4.5 A, 100 V Enhancement, 8-Pin SOIC FDS3992
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.575mm |
| Length | 4.9mm |
| Model | FDS3992 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 123mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- Designed with isolated dual N-Channel MOSFET configuration for efficient power switching.
- Features PowerTrench series technology delivering low gate charge and reverse recovery losses.
- Supports maximum continuous drain current of 4.5 amperes for reliable operation.
- Maximum drain-source voltage rating up to 100 volts for robust device performance.
- Package dimensions include 4.9 mm length, 3.9 mm width, and 1.575 mm height.
- Capable of operating within a wide temperature range from -55°C to +150°C.
- Typical gate charge of 11 nC at gate-source voltage of 11 V supports fast switching.
- Maximum power dissipation rated at 2.5 watts to manage thermal constraints.
Product Description
onsemi FDS3992 Isolated PowerTrench 2 N-Channel MOSFET is a dual N-Channel device designed for surface mounting in power switching applications. This MOSFET supports a maximum continuous drain current of 4.5 A and can withstand a maximum drain-source voltage of 100 V within the robust 8-pin SOIC package. It features enhancement mode channel operation to meet a variety of industrial and electronic control system needs.
Built as part of onsemi's PowerTrench series, the FDS3992 incorporates small gate charge and soft reverse recovery body diode technology, contributing to high efficiency and fast switching in synchronous rectification and AC/DC power supplies. The low gate charge of 11 nC at a gate voltage of 11 V ensures reduced switching losses and improved power density in circuit designs.
The MOSFET is suitable for harsh operating environments with an operating temperature range from -55°C up to +150°C, making it reliable for industrial, automotive, and commercial electronics. Its isolated transistor configuration eliminates the need for an additional snubber circuit, enhancing system simplicity and cost-effectiveness.
This device is optimized for surface mount applications with a compact 8-pin SOIC form factor measuring 4.9 mm in length, 3.9 mm in width, and 1.575 mm in height. The maximum power dissipation rating of 2.5 W facilitates adequate thermal management during operation.
Applications include power management in consumer electronics, automotive control units, industrial automation, and other high-performance power electronic circuits requiring efficient, reliable switching devices.
Designed for industrial and power electronics applications requiring efficient switching. Dual N-Channel MOSFET provides compact and optimized power control. Supports automotive and industrial temperature ranges for wide deployment.
Compact 8-pin SOIC package suitable for surface mount PCB assembly. Soft reverse recovery diode minimizes switching noise and losses. Explore a broad selection of semiconductor products and MOSFET devices at EnvMart to fulfill your power electronics requirements.
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Frequently Asked Questions
The FDS3992 supports a maximum continuous drain current of 4.5 A.
It has a maximum drain-source voltage rating of 100 V.
The package dimensions are 4.9 mm in length, 3.9 mm in width, and 1.575 mm in height.
The typical gate charge is 11 nC at a gate-source voltage of 11 V.
It can operate within a temperature range from -55°C to +150°C.
This model is designed for surface mounting applications.
The maximum power dissipation is rated at 2.5 watts.
The FDS3992 features an N-channel configuration.
It is part of the PowerTrench series from onsemi.
This MOSFET has 8 pins.
The maximum gate-source voltage is -20V to +20V.
It is suitable for power management in consumer electronics, automotive control units, and industrial automation.
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