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onsemi Isolated PowerTrench 2 N-Channel MOSFET 4.7A 80V Enhancement 8-Pin SOIC FDS3890
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.575mm |
| Length | 4.9mm |
| Model | FDS3890 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4.7A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2W |
| Typical Gate Charge Qg @ Vgs | 25nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.74V |
| Transistor Configuration | Isolated |
Key Features
- Maximum continuous drain current of 4.7 amperes allowing robust current handling.
- Drain-source voltage rating of 80 volts suitable for various power applications.
- Enhancement mode channel type complements efficient switching performance.
- PowerTrench series technology offers low Rds(on) of 82 milliohms for minimal power loss.
- Compact 8-pin SOIC surface mount package with dimensions 4.9mm length and 3.9mm width.
- Maximum power dissipation is 2 watts, supporting thermal reliability.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Typical gate charge of 25 nanoCoulombs supports fast switching response.
Product Description
onsemi FDS3890 is an Isolated PowerTrench 2 N-Channel MOSFET designed for power switching applications. Featuring a maximum continuous drain current of 4.7A and a drain-source voltage rating of 80V, this transistor is optimized for high efficiency in power management circuits.
With enhancement mode channel operation and the PowerTrench series technology, it delivers low on-resistance of 82mΩ, which minimizes conduction losses. This MOSFET is housed in a compact 8-pin SOIC surface mount package measuring 4.9mm in length, 3.9mm in width, and 1.575mm in height, making it suitable for space-constrained installations.
This device supports a maximum power dissipation of 2W and operates reliably over a broad temperature range of -55°C up to 175°C, ideal for industrial, automotive, and commercial electronics environments. The gate charge of 25nC aids in fast switching operations, and the soft reverse recovery body diode reduces switching noise and eliminates the need for additional snubber circuits.
The isolated transistor configuration provides improved electrical isolation, beneficial in various discrete semiconductor applications and power supply designs. It has a forward voltage drop of 0.74V, further enhancing energy efficiency.
Maximum continuous drain current: 4.7A. Drain-source voltage: 80V. Package: 8-pin SOIC surface mount. Low drain source resistance Rds(on): 82 mΩ. Operating temperature range: -55°C to 175°C. Maximum power dissipation: 2W.
Gate charge: 25nC. Isolated transistor configuration. Forward voltage: 0.74V.
This MOSFET is suitable for use in industrial electronics, power supplies, automotive systems, and other semiconductor applications requiring efficient switching and power density. Explore more electronic components in the MOSFET category at EnvMart for comprehensive selection and technical support.
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Frequently Asked Questions
The maximum continuous drain current for this model is 4.7 amperes.
It has a drain-source voltage rating of 80 volts, making it suitable for various power applications.
This model comes in an 8-pin SOIC surface mount package with dimensions of 4.9mm in length, 3.9mm in width, and 1.575mm in height.
The low on-resistance (Rds(on)) for this MOSFET is 82 milliohms, which helps minimize power loss during operation.
The FDS3890 operates reliably over a wide temperature range from -55°C to 175°C.
The typical gate charge for this model is 25 nanoCoulombs, which supports fast switching response.
This MOSFET supports a maximum power dissipation of 2 watts, ensuring thermal reliability.
The FDS3890 features an isolated transistor configuration, which improves electrical isolation in applications.
The forward voltage drop for this model is 0.74 volts, enhancing energy efficiency in applications.
It is suitable for use in industrial electronics, power supplies, automotive systems, and other semiconductor applications requiring efficient switching.
This model utilizes an enhancement mode N-channel type, which is optimized for efficient switching performance.
The maximum gate-source voltage for this model is -20V to +20V, allowing for a range of control options in circuit designs.
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