onsemi Isolated PowerTrench Dual Type P and N-Channel MOSFET 6.4 A, 30 V, Enhancement Mode, 8-Pin SOIC FDS8958B

onsemi FDS8958B Isolated PowerTrench Dual Type P and N-Channel MOSFET provides a high-efficiency power switch solution designed to optimize system efficiency and power density. The device features a combination of small gate charge and soft reverse recovery body diode, enabling fast switching performance ideal for synchronous rectification in AC/DC power supplies. It is constructed using advanced PowerTrench technology, which employs a shielded-gate structure for superior charge balance and Fig. of Merit improvement compared to prior generations.

The product is housed in a compact surface-mount 8-Pin SOIC package, suitable for automated PCB assembly and space-constrained applications. With a maximum continuous drain current of 6.4 A and maximum drain-source voltage of 30 V, it is well-suited for medium power applications. Its low on-resistance of 80 mΩ helps minimize conduction losses, supporting efficient operation.

Operating reliably across a wide temperature range from -55°C up to 150°C, the FDS8958B MOSFET ensures durability in demanding industrial, automotive, and consumer electronics environments. The transistor's isolated configuration and enhancement mode channel further enhance ease of integration into varied circuit designs.

This MOSFET supports a typical gate charge of 12 nC at Vgs, contributing to low switching losses and enhanced power supply performance. The maximum gate-source voltage ratings of -25 V to +25 V provide robust protection for gate drive circuits. Additionally, the soft body diode characteristic reduces or eliminates the need for snubber circuits, contributing to more compact, cost-effective power designs.

Dual N/P-channel isolated MOSFET construction. PowerTrench series technology for balanced charge and reduced FOM. Surface-mount SOIC package (8-pin) with compact dimensions. Wide thermal operating range and high power dissipation capability.

Designed for fast switching and synchronous rectification in power management. Low Rds(on) ensuring minimal conduction losses. Soft body diode reduces external circuitry requirements.

This component is ideal for industrial, automotive, power supply, and electronic applications requiring efficient and reliable MOSFET performance. Browse the Electronics & Electricals category on EnvMart for a wide selection of semiconductor devices and related components.