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onsemi UniFET N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-220F FDPF20N50FT

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onsemi UniFET N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-220F FDPF20N50FT

Name: onsemi UniFET N-Channel MOSFET, 20 A, 500 V Enhancement, 3-Pin TO-220F FDPF20N50FT
Brand: onsemi
SKU: 242539
Price: 3.23 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	16.07mm
Length	10.36mm
Model	FDPF20N50FT
Width	4.9mm
Mount Type	Through Hole
Series	UniFET
Maximum Operating Temperature	150°C
Package Type	TO-220F
Minimum Operating Temperature	-55°C
Standards/Approvals	RoHS Compliant
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	20A
Maximum Drain Source Voltage Vds	500V
Maximum Drain Source Resistance Rds	0.26Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	250W
Typical Gate Charge Qg @ Vgs	50nC
Maximum Gate Source Voltage Vgs	-30, +30V
Forward Voltage Vf	1.5V

Key Features

This MOSFET features an enhancement mode channel for reliable switching applications.
The device has a maximum power dissipation of 250 W suitable for high power electronics.
Its low Rds(on) resistance of 0.26 ohms ensures efficient conduction with minimal losses.
Operating temperature ranges from -55°C up to 150°C, enabling use in harsh environments.
The typical gate charge is 50 nC at Vgs, supporting fast switching performance.
It includes a forward voltage of 1.5 V and withstands gate-source voltages of -30 V to +30 V.
The component complies with RoHS standards for environmental safety.
Compact dimensions of 16.07 mm height, 10.36 mm length, and 4.9 mm width fit various designs.

Product Description

onsemi FDPF20N50FT is a UniFET N-Channel MOSFET designed for power switching applications. It supports a maximum continuous drain current of 20 A and a drain-source voltage rating of 500 V, housed within a 3-pin TO-220F package. The device's enhancement mode channel structure provides reliable switching with low on-resistance characteristics.

This MOSFET can dissipate up to 250 W power, making it suitable for high power electronics in industrial, commercial, and consumer electronics fields. Operating in temperature ranges from -55°C to a maximum of 150°C ensures durability under demanding conditions.

Typical gate charge of 50 nC at gate-source voltage supports fast switching speeds and efficient power management. The device tolerates gate-source voltages between -30 V and +30 V, providing robustness against voltage spikes. Its low maximum drain-source resistance of 0.26 ohms reduces conduction losses and improves energy efficiency.

With compliance to RoHS directives, this MOSFET meets environmental standards for safer use. The compact dimensions of 16.07 mm height, 10.36 mm length, and 4.9 mm width allow integration into various electronic assemblies. The through-hole mount simplifies PCB assembly processes.

Typical applications include switching power converters, power factor correction units, flat panel display power supplies, ATX power supplies, and electronic lamp ballasts. The internal gate-source ESD diode enhances durability against high surge stresses, making the component highly reliable in diverse electronics usage.

Key features:. High voltage UniFET MOSFET with smallest planar MOSFET on-state resistance. Superior switching performance and avalanche energy handling capability. 3-pin TO-220F package with through-hole mounting. Wide operating temperature range from -55°C to 150°C.

RoHS compliant for environmental safety. Designed for robust and efficient power conversion applications. Explore a wide range of semiconductor devices including MOSFETs and other discrete semiconductors in the Electronics & Electricals category at EnvMart.