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onsemi PowerTrench Type P-Channel MOSFET, 9.4 A, 20 V, Enhancement Mode, 6-Pin MLP FDMA910PZ

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.75mm
Length 2mm
Model FDMA910PZ
Width 2mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type MLP
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 9.4A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 34mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.4W
Typical Gate Charge Qg @ Vgs 21nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V

Key Features

  • Maximum continuous drain current of 9.4 amperes ensures reliable operation under heavy load conditions.
  • Operates with a maximum drain-source voltage of 20 volts suitable for low voltage power switching.
  • Features low on-resistance of 34 milliohms enabling efficient switching performance.
  • Compact MLP 6-pin surface mount package with dimensions of 2mm x 0.75mm x 2mm suited for dense PCB layouts.
  • Maximum power dissipation rating of 2.4 watts supports moderate thermal loads.
  • Wide operating temperature range from -55°C to 150°C for industrial applications.
  • Enhancement mode with soft body diode minimizes switching losses for synchronous rectification use cases.
  • Typical gate charge of 21 nanocoulombs enables fast switching frequency capabilities.

Product Description

onsemi FDMA910PZ is a PowerTrench® Type P-Channel MOSFET rated for 9.4 A continuous drain current and 20 V maximum drain-source voltage, designed with enhancement mode operation in a compact 6-pin MLP package. This device is optimized for efficient power switching applications requiring fast switching speeds and low conduction losses.

The device features a low drain-source resistance of 34 milliohms and typical gate charge of 21 nanocoulombs, enhancing system efficiency and reducing power dissipation. Its package dimensions (2mm length, 0.75mm height, 2mm width) allow for high-density PCB mounting, making it ideal for space-constrained electronic hardware.

The MOSFET offers robust thermal performance with a maximum power dissipation of 2.4 watts and operational temperature range from -55°C to 150°C. Its soft reverse recovery body diode performance enables elimination of snubber circuits or replacement of higher voltage rating MOSFETs, improving overall system design.

Applications include synchronous rectification in AC/DC power supplies, power management in consumer electronics, communications, and industrial systems where surface mount technology is preferred.

Maximum continuous drain current of 9.4 A for reliable high-current operation. Maximum drain-source voltage of 20 V for low voltage power switching. Low on-resistance of 34 mΩ for reduced conduction losses. 6-Pin MLP surface mount package sized for compact installations.

2.4 W power dissipation rating supporting moderate thermal loads. Temperature rating from -55°C to 150°C enabling industrial use. Soft body diode for reduced switching losses and simplified circuitry. Typical gate charge 21 nC facilitates fast switching frequencies.

Maximum gate-source voltage ±8 V for gate protection. PowerTrench technology enhances efficiency and power density in system designs.

This MOSFET is suited for applications across industrial, consumer electronics, telecommunications, and power supply sectors. Explore more components like this in the Electronics & Electricals category at EnvMart.

onsemi PowerTrench Type P-Channel MOSFET, 9.4 A, 20 V, Enhancement Mode, 6-Pin MLP FDMA910PZ
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Frequently Asked Questions

The maximum continuous drain current for this model is 9.4 amperes, ensuring reliable operation under heavy load conditions.

The FDMA910PZ operates with a maximum drain-source voltage of 20 volts, suitable for low voltage power switching applications.

This model features a low on-resistance of 34 milliohms, which enables efficient switching performance.

The compact MLP package of the FDMA910PZ measures 2mm in length, 0.75mm in height, and 2mm in width, making it suitable for dense PCB layouts.

The typical gate charge for this MOSFET is 21 nanocoulombs, facilitating fast switching frequency capabilities.

The maximum power dissipation rating for the FDMA910PZ is 2.4 watts, supporting moderate thermal loads.

This model operates within a wide temperature range from -55°C to 150°C, making it suitable for industrial applications.

It features a soft body diode, which minimizes switching losses and is beneficial for synchronous rectification use cases.

This MOSFET has a pin count of 6, designed for surface mount applications.

The FDMA910PZ operates in enhancement mode, which is designed for efficient power switching applications.

The maximum gate-source voltage for the FDMA910PZ is ±8 volts, providing gate protection.

This MOSFET is suitable for synchronous rectification in AC/DC power supplies, power management in consumer electronics, and telecommunications.

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