onsemi PowerTrench Type P-Channel MOSFET, 10 A Continuous Drain Current, 12 V Drain Source Voltage, 6-Pin MLP FDMA905P

onsemi FDMA905P PowerTrench Type P-Channel MOSFET is a surface mount semiconductor device designed for efficient power switching applications with a maximum drain source voltage of 12 V and continuous drain current of 10 A. The device utilizes advanced PowerTrench technology and a shielded-gate structure to significantly lower the figure of merit (FOM), which leads to improved switching efficiency and reduced power losses.

This MOSFET is constructed in a compact 6-pin MLP package with dimensions of 2 mm length, 2 mm width, and 0.725 mm height, making it ideal for space-constrained industrial and commercial electronics. Its robust operating temperature range from -55°C to 150°C ensures reliable performance in harsh environments.

The FDMA905P features a low typical gate charge of 21nC, which contributes to fast switching speeds and reduced switching losses. Its maximum power dissipation is 2.4 W, suitable for moderate power applications such as synchronous rectification in AC/DC power supplies, DC motor control, and other power management circuits in industrial, automotive, and consumer electronics.

The device incorporates a soft reverse recovery body diode that helps eliminate the need for snubber circuits and supports higher efficiency by mitigating switching noise. The maximum drain-source resistance (Rds) of 82 mΩ ensures low conduction losses during operation. The gate voltage tolerance ranges from -8 V to +8 V, providing flexibility in drive circuitry design.

With no specific industry certifications or automotive standards declared, this new condition MOSFET is manufactured in India, adhering to standard quality controls for semiconductor devices.

Low typical gate charge of 21nC enables efficient switching. Compact 6-pin MLP package with minimal footprint. Wide operating temperature range from -55°C to 150°C. Soft reverse recovery body diode minimizes switching losses.

Maximum continuous drain current of 10 A and drain-source voltage of 12 V. Maximum power dissipation of 2.4 W suits moderate power uses. Maximum drain-source resistance of 82 mΩ reduces conduction losses. Robust gate-source voltage limits from -8 V to +8 V.

Ideal for AC/DC power supplies and industrial electronics applications.

This onsemi PowerTrench MOSFET is a reliable choice for designers needing compact, efficient, and high-performance P-channel MOSFETs in electronics manufacturing, power management, and control system applications. Explore more semiconductor components and MOSFETs in the Electronics & Electricals categories at EnvMart.