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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.725mm |
| Length | 2mm |
| Model | FDMA905P |
| Width | 2mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | MLP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 10A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.4W |
| Typical Gate Charge Qg @ Vgs | 21nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -1.2V |
onsemi FDMA905P is a PowerTrench Type P-Channel MOSFET designed for high-efficiency switching applications with a maximum continuous drain current of 10 A and a maximum drain-source voltage of 12 V. Packaged in a 6-pin MLP surface mount unit, this MOSFET is optimized for low gate charge and fast switching, making it ideal for power management and motor control in industrial and consumer electronics.
Its shielded-gate structure technology enhances charge balance and substantially lowers the device's figure of merit (FOM) compared to earlier MOSFET generations. With an enhancement channel mode and a typical gate charge of 21 nC, the device ensures efficient switching with minimal power loss.
The MOSFET operates reliably under a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 2.4 W. Its compact dimensions of 2 mm length, 2 mm width, and 0.725 mm height support space-constrained applications.
The device includes a soft body diode capable of eliminating snubber circuits or replacing higher voltage MOSFETs, contributing to system cost reduction and improved efficiency. Its construction supports surface mounting, facilitating integration into modern PCB designs.
This MOSFET is appropriate for a broad range of industrial, laboratory, and commercial electronic equipment requiring efficient power switching and management at low voltages and moderate currents.
Low gate charge and soft reverse recovery body diode for fast, efficient switching. Shielded-gate structure reduces switching losses and improves balance. Enhancement mode channel for controlled operation. Wide operating temperature range from -55°C to 150°C.
Compact 6-pin MLP package for surface mounting. High maximum drain current rating of 10 A suitable for many power applications. Moderate maximum power dissipation of 2.4 W. Ideal for use in power supplies, motor drives, and other electronic systems.
Explore more power semiconductors and MOSFET devices at EnvMart for optimized industrial and commercial project solutions.
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