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onsemi PowerTrench Type P-Channel MOSFET 10 A 12 V Enhancement 6-Pin MLP FDMA905P

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.725mm
Length 2mm
Model FDMA905P
Width 2mm
Mount Type Surface
Series PowerTrench
Maximum Operating Temperature 150°C
Package Type MLP
Minimum Operating Temperature -55°C
Pin Count 6
Channel Type Type P
Maximum Continuous Drain Current Id 10A
Maximum Drain Source Voltage Vds 12V
Maximum Drain Source Resistance Rds 82mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 2.4W
Typical Gate Charge Qg @ Vgs 21nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf -1.2V

Key Features

  • Features low gate charge and soft reverse recovery body diode for efficient switching performance.
  • Utilizes shielded-gate structure technology to optimize charge balance and reduce figure of merit (FOM).
  • Supports maximum power dissipation of 2.4 W with enhancement channel mode.
  • Operates from -55°C to 150°C offering reliable thermal performance.
  • Compact dimensions of 2mm length, 2mm width, and 0.725mm height.
  • Package type MLP ensures low-profile mounting suitable for compact electronic designs.
  • Typical gate charge of 21 nC at Vgs and a maximum gate-source voltage range of -8 to +8 V.
  • No automotive certification or additional standards approval present.

Product Description

onsemi FDMA905P is a PowerTrench Type P-Channel MOSFET designed for high-efficiency switching applications with a maximum continuous drain current of 10 A and a maximum drain-source voltage of 12 V. Packaged in a 6-pin MLP surface mount unit, this MOSFET is optimized for low gate charge and fast switching, making it ideal for power management and motor control in industrial and consumer electronics.

Its shielded-gate structure technology enhances charge balance and substantially lowers the device's figure of merit (FOM) compared to earlier MOSFET generations. With an enhancement channel mode and a typical gate charge of 21 nC, the device ensures efficient switching with minimal power loss.

The MOSFET operates reliably under a wide temperature range from -55°C to 150°C and supports a maximum power dissipation of 2.4 W. Its compact dimensions of 2 mm length, 2 mm width, and 0.725 mm height support space-constrained applications.

The device includes a soft body diode capable of eliminating snubber circuits or replacing higher voltage MOSFETs, contributing to system cost reduction and improved efficiency. Its construction supports surface mounting, facilitating integration into modern PCB designs.

This MOSFET is appropriate for a broad range of industrial, laboratory, and commercial electronic equipment requiring efficient power switching and management at low voltages and moderate currents.

Low gate charge and soft reverse recovery body diode for fast, efficient switching. Shielded-gate structure reduces switching losses and improves balance. Enhancement mode channel for controlled operation. Wide operating temperature range from -55°C to 150°C.

Compact 6-pin MLP package for surface mounting. High maximum drain current rating of 10 A suitable for many power applications. Moderate maximum power dissipation of 2.4 W. Ideal for use in power supplies, motor drives, and other electronic systems.

Explore more power semiconductors and MOSFET devices at EnvMart for optimized industrial and commercial project solutions.

onsemi PowerTrench Type P-Channel MOSFET 10 A 12 V Enhancement 6-Pin MLP FDMA905P
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Frequently Asked Questions

The maximum continuous drain current for this model is 10 A.

The maximum drain-source voltage is 12 V.

The typical gate charge at Vgs is 21 nC.

This MOSFET has dimensions of 2 mm in length, 2 mm in width, and 0.725 mm in height.

It operates reliably within a temperature range of -55°C to 150°C.

The maximum power dissipation is 2.4 W.

It is packaged in a 6-pin MLP (Micro Leadframe Package) for surface mounting.

This model features a Type P channel.

The maximum gate-source voltage range is -8 to +8 V.

The forward voltage is -1.2 V.

It utilizes shielded-gate structure technology to optimize charge balance and reduce the figure of merit (FOM).

This MOSFET is suitable for power management and motor control in industrial and consumer electronics.

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