onsemi N-Channel Enhancement Mode MOSFET 60 V 2.8 A 4-Pin SOT-223 Package NDT014L

onsemi NDT014L is a N-Channel Enhancement Mode MOSFET transistor featuring a maximum drain-source voltage rating of 60 V and capable of continuous drain currents up to 2.8 A. Packaged in a 4-pin SOT-223 surface mount, this device is optimized for efficient switching and power applications.

Built using advanced DMOS technology, this MOSFET offers low on-resistance, maximizing conduction efficiency while minimizing heat generation. The enhancement mode design ensures swift switching action suited for both industrial and consumer electronics.

Its package dimensions are compact, measuring 6.7 mm in length, 3.7 mm width, and 1.7 mm height, enabling high density PCB layouts. It supports wide gate-source voltage limits from -20 V to +20 V, providing robust gate voltage tolerance.

The device’s power dissipation capacity of 3 watts and normal operating temperature range from -65°C to 150°C make it reliable in demanding industrial, automotive, and instrumentation environments.

Typical gate charge of 3.6 nC allows fast switching application suitability such as power converters and motor control circuits. The maximum drain-source resistance of 360 milli-ohms further contributes to efficiency in design.

Supports a maximum continuous drain current of 2.8 amperes ensuring efficient power handling. Operates with a maximum drain-source voltage rating of 60 volts for medium voltage applications. Enhancement mode channel provides reliable switching performance.

Compact SOT-223 package with 4 pins suitable for surface mounting to PCB. Low maximum drain-source resistance of 360 milliohms minimizes conduction losses. Maximum gate-source voltage rating of -20 to +20 volts for safe gate drive limits.

Can dissipate up to 3 watts of power under operating conditions. Wide operating temperature range from -65°C to 150°C for harsh environments. Typical gate charge of 3.6 nanocoulombs enables fast switching speeds. Forward voltage drop is approximately 0.85 volts at rated conditions.

This MOSFET is ideal for applications in industrial power switching, automotive electronics, and consumer devices. Its robust temperature endurance and power handling capability support varied operating conditions.

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