onsemi PNP Power Transistor, -15 A Collector Current, -250 V Collector Emitter Voltage, 200 W Power Dissipation NJW1302G

onsemi NJW1302G PNP Power Transistor is a robust semiconductor device designed for power control applications requiring high collector current and voltage ratings. Featuring a TO-3P package and through-hole mount type, this transistor supports a maximum DC collector current of -15 amperes and a collector-emitter voltage of -250 volts, making it suitable for demanding power electronics scenarios.

It delivers a maximum power dissipation of 200 watts, allowing efficient thermal management under heavy loads. The device operates effectively in temperatures ranging from -65°C to 150°C, making it reliable for harsh industrial, manufacturing, and automotive environments.

This transistor’s minimum DC current gain of 45 and a maximum transition frequency of 1 MHz provide effective amplification and switching capabilities essential in power amplifier circuits and motor control systems. Its PNP polarity and single transistor configuration enable its integration in diverse bipolar circuits.

The TO-3P package ensures sturdy mounting with three pins, providing mechanical support and excellent heat dissipation characteristics. Its compact dimensions of 40.3 mm height, 15.8 mm length, and 5 mm width make it easily adaptable into standard PCB designs and power modules.

Ideal for industrial electronics, aerospace, power supply design, and high-power switching controls, the NJW1302G maintains performance and durability standards required in professional electronic assemblies.

Supports a maximum DC collector current of -15 A. Maximum collector-emitter voltage rating of -250 V ensures robust operation. High power dissipation capacity up to 200 W for demanding power control tasks. Comes in a TO-3P package with 3 pins for secure and efficient mounting.

Operates reliably within a temperature range of -65°C to 150°C. Minimum DC current gain (hFE) of 45 guarantees adequate amplification. Maximum transition frequency is 1 MHz suitable for power switching applications. Designed with PNP transistor polarity for power electronics circuits.

Provides a maximum collector-base voltage rating of 250 V for enhanced reliability. Compact dimensions: Height 40.3 mm, Length 15.8 mm, Width 5 mm.

For users requiring high-performance bipolar transistors, the onsemi NJW1302G is a dependable choice available in the Electronics & Electricals category at EnvMart, suitable for a wide range of semiconductor applications.

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