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onsemi 5-Element Bi-Directional ESD Protection Diode 0.22W 6-Pin SOT-553 NUF2042XV6T1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | NUF2042XV6T1G |
| Width | 1.3mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 125°C |
| Package Type | SOT-553 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 5 |
| Diode Configuration | Complex Array |
| Direction Type | Bi-Directional |
| Minimum Breakdown Voltage Vbr | 5.6V |
| Maximum Reverse Stand-off Voltage Vwm | 3.3V |
| Peak Pulse Power Dissipation Pppm | 0.22W |
| Test Current It | 1mA |
| Maximum Reverse Leakage Current | 100nA |
Key Features
- Provides bi-directional ESD protection for sensitive components.
- Implements a complex diode array configuration with five elements per chip.
- Operates with a peak pulse power dissipation of 0.22 watts.
- Minimum breakdown voltage of 5.6 volts ensures robust voltage handling.
- Designed for surface mounting with a compact SOT-553 package type.
- Wide operating temperature range from -55°C to 125°C.
- Low maximum reverse leakage current of 100 nanoamperes for efficient performance.
Product Description
onsemi NUF2042XV6T1G 5-Element Bi-Directional ESD Protection Diode is engineered for protecting sensitive electronic devices from electrostatic discharge events, suitable for high-density surface mount applications. Featuring a complex diode array configuration with five integrated elements, this component provides reliable transient voltage suppression with a peak pulse power dissipation rating of 0.22 W.
Designed in the compact 6-Pin SOT-553 package, the diode supports bi-directional protection which makes it ideal for use in EMI filters and ESD-sensitive circuits in industrial, automotive, and consumer electronics.
This diode's electrical characteristics include a minimum breakdown voltage of 5.6 V, maximum reverse stand-off voltage of 3.3 V, and a very low maximum reverse leakage current of 100 nA, ensuring minimal impact on normal operation during standby.
Withstanding operating temperatures from -55°C up to 125°C, the device is suitable for a wide range of environments. Its small footprint measuring 1.7 mm by 1.3 mm and a height of 0.6 mm allows efficient PCB space utilization.
Provides bi-directional ESD protection for sensitive electronics. Five elements integrated in a complex diode array configuration. Surface-mount 6-Pin SOT-553 package for compact design. Peak pulse power capacity of 0.22 watts supports transient voltage suppression.
Low leakage current and stable breakdown voltage characteristics. Wide operating temperature range ensuring versatile application. Suitable for EMI filtering and transient voltage suppression in diverse electronic systems.
This ESD Protection Diode is an essential component within semiconductor protection device portfolios, facilitating enhanced device safety and longevity. It is widely used in industrial, automotive electronics, telecommunications, and consumer electronic applications.
Explore more semiconductor devices and protective components on EnvMart for reliable and high-performance electronic design solutions.
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Frequently Asked Questions
The peak pulse power dissipation of the NUF2042XV6T1G is rated at 0.22 watts.
This model has a minimum breakdown voltage of 5.6 volts, ensuring robust voltage handling.
The maximum reverse stand-off voltage for this diode is 3.3 volts.
It operates within a temperature range of -55°C to 125°C, making it suitable for various environments.
The maximum reverse leakage current is 100 nanoamperes, providing efficient performance during operation.
This diode is designed in a compact 6-Pin SOT-553 package for surface mounting.
There are five elements integrated in a complex diode array configuration per chip.
The height of this model is 0.6 mm, with a footprint measuring 1.7 mm by 1.3 mm.
It is suitable for EMI filtering and transient voltage suppression in industrial, automotive, and consumer electronics.
The test current for this diode is 1 mA, which is used during its electrical characterization.
This model provides bi-directional ESD protection for sensitive electronic components.
The country of origin for this diode is India.
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