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onsemi 5-Element Bi-Directional ESD Protection Diode 0.22W 6-Pin SOT-553 NUF2042XV6T1G

Category ESD Protection Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.6mm
Length 1.7mm
Model NUF2042XV6T1G
Width 1.3mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type SOT-553
Minimum Operating Temperature -55°C
Pin Count 6
Number of Elements per Chip 5
Diode Configuration Complex Array
Direction Type Bi-Directional
Minimum Breakdown Voltage Vbr 5.6V
Maximum Reverse Stand-off Voltage Vwm 3.3V
Peak Pulse Power Dissipation Pppm 0.22W
Test Current It 1mA
Maximum Reverse Leakage Current 100nA

Key Features

  • This diode features a complex array diode configuration for efficient ESD protection.
  • Bi-directional design enables handling voltage surges in both polarities.
  • Minimum breakdown voltage (Vbr) is rated at 5.6V ensuring robust protection.
  • Maximum operating temperature reaches up to 125°C for industrial reliability.
  • Compact dimensions of 1.7mm length, 1.3mm width, and 0.6mm height facilitate surface mount applications.
  • Maximum reverse leakage current is limited to 100nA minimizing power loss.
  • Operates effectively from -55°C up to 125°C ensuring broad temperature compatibility.
  • Surface mount type and SOT-553 package provide ease in PCB design and assembly.

Product Description

The onsemi NUF2042XV6T1G is a 5-element bi-directional ESD Protection Diode designed for transient voltage suppression applications with a peak pulse power dissipation rating of 0.22 W. Packaged in a compact 6-pin SOT-553 surface mount package, this diode ensures efficient electrostatic discharge protection suitable for sensitive electronic components.

This diode features a complex array diode configuration providing dual-direction transient voltage suppression to safeguard circuits against damaging voltage spikes. With a minimum breakdown voltage of 5.6V and maximum reverse stand-off voltage of 3.3V, the device clamps transient voltages efficiently.

Operating across a temperature range from -55°C to 125°C, the NUF2042XV6T1G supports robust performance in demanding industrial, electronic assembly, telecommunications, and automotive applications requiring reliable ESD protection.

The small footprint of 1.7mm length, 1.3mm width, and 0.6mm height allows high-density circuit board layouts while maintaining surface mount compatibility for automated assembly lines. Its maximum reverse leakage current of 100nA minimizes leakage losses during standby conditions.

This product is ideal for protecting integrated circuits, data ports, and interfaces in consumer electronics, industrial equipment, and communication devices. This diode features a complex array diode configuration for efficient ESD protection.

Bi-directional design enables handling voltage surges in both polarities. Minimum breakdown voltage (Vbr) is rated at 5.6V ensuring robust protection. Maximum operating temperature reaches up to 125°C for industrial reliability.

Compact dimensions of 1.7mm length, 1.3mm width, and 0.6mm height facilitate surface mount applications. Maximum reverse leakage current is limited to 100nA minimizing power loss. Operates effectively from -55°C up to 125°C ensuring broad temperature compatibility.

Surface mount type and SOT-553 package provide ease in PCB design and assembly.

Discover the complete range of onsemi semiconductor components and electrostatic discharge protection devices at EnvMart for your industrial and commercial electronic design needs.

onsemi 5-Element Bi-Directional ESD Protection Diode 0.22W 6-Pin SOT-553 NUF2042XV6T1G
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Frequently Asked Questions

The maximum operating temperature of the NUF2042XV6T1G is 125°C, ensuring reliability in industrial applications.

The minimum breakdown voltage (Vbr) for this model is rated at 5.6V, providing robust protection against voltage spikes.

This diode has compact dimensions of 1.7mm in length, 1.3mm in width, and 0.6mm in height, facilitating surface mount applications.

The maximum reverse leakage current for the NUF2042XV6T1G is limited to 100nA, which minimizes power loss during standby conditions.

The peak pulse power dissipation rating of the NUF2042XV6T1G is 0.22W, suitable for transient voltage suppression applications.

This model operates effectively from -55°C up to 125°C, ensuring broad temperature compatibility for various applications.

The diode is packaged in a compact 6-pin SOT-553 surface mount package, which aids in PCB design and assembly.

The NUF2042XV6T1G features a complex array diode configuration that provides efficient ESD protection.

Yes, this diode is bi-directional, allowing it to handle voltage surges in both polarities.

This model contains 5 elements per chip, enhancing its capability for ESD protection.

The NUF2042XV6T1G is suitable for protecting integrated circuits, data ports, and interfaces in consumer electronics, industrial equipment, and communication devices.

The test current (It) for the NUF2042XV6T1G is 1mA, which is used for evaluating its performance.

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