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onsemi Isolated 2 N-Channel MOSFET, 280 mA, 60 V Enhancement, 6-Pin SOT-563 2N7002V
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.6mm |
| Length | 1.7mm |
| Model | 2N7002V |
| Width | 1.2mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOT-563 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Number of Elements per Chip | 2 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 280mA |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 13.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250mW |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Transistor Configuration | Isolated |
Key Features
- This device features an isolated dual N-channel MOSFET configuration for enhanced performance.
- Maximum drain-source resistance is 13.5 ohms, ensuring efficient power handling.
- Capable of operating within temperature ranges from -55°C to +150°C.
- Maximum gate-source voltage tolerance is -20 V to +20 V, enhancing device reliability.
- Surface mount type package suitable for modern electronic assemblies.
- Designed utilizing proprietary high cell density DMOS technology for robust switching and low on-resistance.
Product Description
onsemi 2N7002V Isolated 2 N-Channel MOSFET is a reliable and high-performance semiconductor device designed for discrete electronic applications. It features a dual isolated N-channel enhancement mode MOSFET configuration enclosed in a compact 6-Pin SOT-563 surface-mount package.
The transistor offers a maximum continuous drain current of 280 mA and a maximum drain-source voltage of 60 V, making it suitable for low to medium power applications such as switching, amplification, and load driving. The device supports fast switching, enhanced by Fairchild Semiconductor’s proprietary high cell density DMOS technology, which reduces on-state resistance and ensures rugged reliability in demanding conditions.
Operating temperature ranges from -55°C to +150°C makes this MOSFET well-suited for various industrial and commercial environments, including automotive electronics, power management, and portable devices. Its tolerable maximum gate-source voltage of -20 V to +20 V adds to the robustness of the component.
The device's compact package dimensions of 1.7 mm in length, 1.2 mm in width, and 0.6 mm in height enable high-density PCB layouts. The surface-mount package type supports automated assembly processes commonly used in modern manufacturing.
This MOSFET is designed for industrial, commercial, and electronic component manufacturing applications. The device's isolated transistor configuration supports circuit designs requiring dual switching elements under a single package.
Its low on-resistance and fast switching behavior optimize performance in power regulation and signal switching circuits. The component lacks formal automotive certification but is reliable for general electronic applications.
Package includes a dual element chip configuration to enhance functionality in compact devices. Explore a comprehensive range of semiconductors, MOSFETs, and discrete components on EnvMart for your advanced electronics manufacturing and repair needs.
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Frequently Asked Questions
The maximum continuous drain current for the 2N7002V MOSFET is 280 mA.
This model can handle a maximum drain-source voltage of 60 V.
The SOT-563 package has dimensions of 1.7 mm in length, 1.2 mm in width, and 0.6 mm in height.
The maximum gate-source voltage tolerance for this MOSFET is -20 V to +20 V.
The operating temperature range for the 2N7002V is from -55°C to +150°C.
The maximum drain-source resistance of this device is 13.5 ohms.
The 2N7002V features an isolated dual N-channel enhancement mode MOSFET configuration.
Yes, the 2N7002V is designed in a surface mount type package suitable for modern electronic assemblies.
The maximum power dissipation rating for this model is 250 mW.
The 2N7002V has a total of 6 pins.
The 2N7002V is designed for low to medium power applications such as switching, amplification, and load driving.
The 2N7002V is designed utilizing proprietary high cell density DMOS technology for improved switching and low on-resistance.
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