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onsemi Type P-Channel MOSFET, 1 A, 20 V Enhancement Mode, Surface Mount 3-Pin SOT-23 Package NVR1P02T1G
Specifications
| Country of Origin | China |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NVR1P02T1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 180mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 400mW |
| Typical Gate Charge Qg @ Vgs | 2.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1V |
Key Features
- Designed for enhancement mode operation providing reliable switching performances.
- Maximum power dissipation is 400 mW supporting efficient thermal management.
- Operational temperature range from -55°C to 150°C caters to demanding industrial applications.
- Compact dimensions of 3.04mm length, 1.4mm width, and 1.01mm height enable high-density PCB layout.
- Typical gate charge of 2.5 nC enhances charge control for fast switching.
- Maximum drain-source resistance of 180 mΩ helps reduce conduction losses.
- Gate-source voltage tolerance up to ±20 V ensures robust gate protection.
- AEC-Q101 qualified, suitable for automotive and industrial standards.
Product Description
onsemi's NVR1P02T1G is a Type P-Channel MOSFET designed for efficient power switching in compact electronic circuits. Operating at a maximum continuous drain current of 1 A and a maximum drain-source voltage of 20 V, this transistor delivers reliable performance in a 3-pin SOT-23 surface mount package ideal for space-constrained designs.
The device operates in enhancement mode and offers a maximum power dissipation of 400 mW, allowing effective heat dissipation in demanding environments. It supports a broad temperature range from -55°C to 150°C, making it suitable for automotive and industrial applications adhering to AEC-Q101 standards.
Key physical dimensions include a length of 3.04 mm, width of 1.4 mm, and height of 1.01 mm, enabling compact integration on printed circuit boards.
The typical gate charge is 2.5 nC at a gate-source voltage of 2.5 V, facilitating swift and efficient switching control. With a maximum drain-source resistance of 180 milliohms, the MOSFET ensures low conduction losses, enhancing energy efficiency in power management circuits.
Featuring a forward voltage of -1 V and gate-source voltage limits of -20 to +20 V, it provides enhanced gate tolerance for circuit reliability. The device is manufactured in China under strict quality controls to meet industrial grade requirements.
Designed for high-efficiency enhancement mode switching applications. Supports automotive-grade reliability with AEC-Q101 certification. Compact SOT-23 package enables space-saving PCB layouts. Wide operating temperature range suited for harsh environments.
Low gate charge and resistance enhance switching speed and efficiency. Robust gate-source voltage withstand capability protects circuit integrity. Manufactured with high-quality standards ensuring consistent performance.
This onsemi MOSFET is widely used in industrial, automotive, power management, and electronics manufacturing sectors for efficient power control and switching. Browse more discrete semiconductor solutions and onsemi products at EnvMart for robust industrial-grade components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1 A.
It operates within a temperature range of -55°C to 150°C.
The maximum drain-source voltage is 20 V.
This model is packaged in a SOT-23 surface mount package.
The maximum power dissipation is 400 mW.
The typical gate charge is 2.5 nC at a gate-source voltage of 2.5 V.
The maximum drain-source resistance is 180 mΩ.
It has a gate-source voltage tolerance of ±20 V.
Yes, this model is AEC-Q101 qualified, making it suitable for automotive applications.
The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.
It is a Type P channel MOSFET designed for enhancement mode operation.
The forward voltage is -1 V.
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