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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | RFD16N06LESM9A |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | RFD16N06LESM |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 16A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 47mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 90W |
| Typical Gate Charge Qg @ Vgs | 51nC |
| Maximum Gate Source Voltage Vgs | -8, +10V |
onsemi RFD16N06LESM9A is an enhancement mode N-Channel MOSFET featuring a maximum continuous drain current of 16 A and a maximum drain-source voltage of 60 V. The 3-pin TO-252 package supports surface mount technology, providing a compact footprint with dimensions 6.73 mm in length, 6.22 mm width, and 2.39 mm height.
This device utilizes advanced DMOS technology to minimize on-state resistance to 47 milliohms, enabling low power loss and high efficiency switching in industrial and power management applications. It supports a maximum power dissipation rating of 90 W which ensures reliable operation under demanding conditions.
The MOSFET operates safely across a wide temperature range from -55°C to 175°C, making it suitable for diverse environments. With a typical gate charge of 51 nC at given gate-source voltages, it ensures fast switching speed, essential for high-performance electronic circuits. The maximum gate-source voltage rating is between -8 V and +10 V for stable operation.
Designed for environmentally conscious applications, this MOSFET complies with RoHS directives. Its excellent electrical characteristics and compact package make it ideal for use in automotive electronics, power supplies, industrial controls, and other discrete semiconductor applications.
Enhancement mode N-Channel MOSFET designed for reliable surface mounting. Maximum drain current: 16 A and voltage: 60 V for robust power handling. Low drain-source resistance of 47 milliohms to reduce conduction losses. Wide operating temperature range from -55°C to 175°C for versatile use.
Compact TO-252 package ensures easy integration into circuits. Fast switching with typical gate charge of 51 nC improves efficiency. Gate voltage tolerance from -8 V to +10 V for precise control. Compliance with RoHS environmental standards.
Ideal for industrial, automotive, and power management applications.
This product belongs to the MOSFET category in the discrete semiconductors segment, suitable for advanced electronic designs requiring efficient, reliable switching components. Explore related MOSFET and semiconductor products on EnvMart to find complementary parts.
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