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onsemi N-Channel Enhancement MOSFET, 11 A, 60 V, 3-Pin TO-252 Package RFD3055LESM9A
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | RFD3055LESM9A |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | RFD3055LESM |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 107mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 38W |
| Typical Gate Charge Qg @ Vgs | 9.4nC |
| Maximum Gate Source Voltage Vgs | -16, +16V |
Key Features
- Enhancement mode N-channel MOSFET for reliable electronic switching.
- Maximum continuous drain current of 11 amperes for high power applications.
- Drain-source voltage rating of 60 volts to handle medium voltage loads.
- Package type is TO-252 with 3 pins for surface mount applications.
- Low maximum drain-source resistance of 107 milliohms ensures efficient conduction.
- Capable of dissipating up to 38 watts of power safely during operation.
- Wide operating temperature range from -55°C to 175°C for harsh environments.
- Typical gate charge of 9.4 nanocoulombs at Vgs provides fast switching performance.
Product Description
onsemi RFD3055LESM9A is a high-performance N-channel enhancement mode MOSFET designed for efficient switching and power management in electronic circuits. This device supports a maximum continuous drain current of 11 A and a maximum drain-source voltage of 60 V, making it suitable for medium power industrial, automotive, and consumer electronics applications.
The MOSFET is housed in a TO-252 surface mount package with 3 pins, offering a compact form factor with dimensions measuring 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height. It features a low Rds(on) of 107 milliohms which helps reduce conduction losses, increasing energy efficiency.
Designed with Fairchild’s proprietary high cell density DMOS technology, this component ensures rugged, reliable performance and fast switching characteristics. The device tolerates gate-source voltages up to ±16 V and operates safely in a temperature range from -55°C to 175°C, making it capable of withstanding harsh environmental conditions encountered in industrial and automotive use cases.
Typical gate charge of 9.4 nC at Vgs supports rapid switching applications, enhancing the overall speed and flexibility of the circuitry. The maximum power dissipation rating of 38 W further affirms its suitability for power-intensive electronics.
This MOSFET is ideal for power conversion, motor control, switching power supplies, and other power management applications requiring a robust N-channel MOSFET with efficient characteristics. Its surface mount TO-252 package enables easy mounting on printed circuit boards used in industrial automation, HVAC systems, manufacturing equipment, and power supply modules.
Enhancement mode N-channel MOSFET with 11 A drain current. 60 V drain-source voltage rating for medium voltage applications. Low 107 mΩ on resistance for efficient conduction. Suitable for high power dissipation up to 38 W.
Wide operating temperature range from -55°C to 175°C. Fast switching with typical gate charge of 9.4 nC at Vgs. Compact TO-252 3-pin surface mount package. Robust design for industrial and automotive environments. Explore a wide range of semiconductor components and MOSFETs at EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 11 A, suitable for high power applications.
This MOSFET has a maximum drain-source voltage rating of 60 V, making it appropriate for medium voltage loads.
It is housed in a TO-252 package with 3 pins for surface mount applications.
The maximum power dissipation rating is 38 W, allowing it to handle power-intensive applications.
The typical gate charge at Vgs is 9.4 nC, which supports fast switching performance.
It operates safely within a temperature range from -55°C to 175°C, suitable for harsh environments.
The maximum drain-source resistance (Rds(on)) is 107 milliohms, ensuring efficient conduction.
This model is an enhancement mode N-channel MOSFET, designed for reliable electronic switching.
The dimensions of the TO-252 package are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
It can tolerate gate-source voltages up to ±16 V, providing flexibility in various applications.
This model is suitable for applications such as power conversion, motor control, and switching power supplies.
The country of origin for this MOSFET is India.
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