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Infineon OptiMOS N-Channel MOSFET 433 A 30 V 8-Pin TDSON BSC005N03LS5ATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 5.49mm |
| Model | BSC005N03LS5ATMA1 |
| Width | 6.35mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | TDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 433A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 5.5mΩ |
| Maximum Power Dissipation Pd | 188W |
| Typical Gate Charge Qg @ Vgs | 59nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- High continuous drain current of 433 A enables heavy-current switching applications.
- Low on-resistance of 5.5 milliohms minimizes conduction losses under load.
- Maximum drain-source voltage rating of 30 V supports moderate-voltage power stages.
- Power dissipation capacity of 188 W ensures high-power handling capability.
- Typical gate charge of 59 nC allows efficient gate-drive energy management.
- Wide operating temperature range from -55°C to 175°C accommodates harsh environments.
- Maximum gate-source voltage of ±20 V provides wide drive voltage margin.
- Compact 8-pin TDSON surface-mount package with dimensions approximately 5.49 mm × 6.35 mm × 1.1 mm.
Product Description
Infineon BSC005N03LS5ATMA1 is a high-current N-channel MOSFET designed for surface-mount power switching applications requiring low conduction losses and robust continuous drain current capability. It features a maximum drain-source voltage of 30 V, a continuous drain current of 433 A, and a low on-state resistance of 5.5 milliohms. The device is housed in an 8-pin TDSON package measuring 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height, providing a compact footprint for space-constrained designs.
This MOSFET supports a maximum power dissipation of 188 W, making it suitable for high-power applications. It operates across a broad temperature range from -55 °C to 175 °C, ensuring reliable performance in demanding thermal environments. A typical gate charge of 59 nC and a maximum gate-source voltage of ±20 V facilitate efficient and predictable gate driver design.
The TDSON package requires proper PCB copper area and thermal management techniques such as thermal vias to effectively dissipate heat and leverage the device’s power rating.
Typical application areas include high-current DC-DC converters, server power rails, telecommunications power modules, motor drive stages needing continuous high current, and battery management and power distribution systems. The Infineon OptiMOS series combines performance, reliability, and compactness for modern electronic power management needs.
High continuous current capability for demanding power stages. Low conduction loss due to minimal on-resistance. Wide temperature operating range for harsh environments. Compact surface-mount design with effective thermal management.
Optimized gate charge for efficient switching control. Robust power dissipation rating for high-power applications.
Explore more Infineon power semiconductor devices and related MOSFETs on EnvMart to find suitable components for your industrial, telecommunications, computing, and automotive projects.
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Frequently Asked Questions
The maximum continuous drain current of this model is 433 A, making it suitable for heavy-current switching applications.
This MOSFET has a maximum drain-source voltage rating of 30 V, which supports moderate-voltage power stages.
The on-resistance of this unit is 5.5 milliohms, which minimizes conduction losses under load.
It has a power dissipation capacity of 188 W, ensuring high-power handling capability.
The typical gate charge is 59 nC, allowing for efficient gate-drive energy management.
The dimensions of the 8-pin TDSON package are approximately 5.49 mm in length, 6.35 mm in width, and 1.1 mm in height.
The maximum gate-source voltage is ±20 V, providing a wide drive voltage margin.
This model features a surface mount type, suitable for compact designs.
This device is an N-channel MOSFET, designed for efficient power switching applications.
The country of origin for this MOSFET is India.
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