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Infineon CoolMOS N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.5mm |
| Length | 16.3mm |
| Model | IPW65R125CFD7XKSA1 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Maximum Power Dissipation Pd | 98W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This MOSFET supports a maximum continuous drain current of 19 A.
- It features a maximum drain source voltage rating of 700 V for robust performance.
- The device is housed in a 3-pin TO-247 package suitable for through-hole mounting.
- The maximum power dissipation capability is 98 W, enabling reliable thermal management.
- It offers a typical gate charge of 36 nC at Vgs providing efficient switching.
- Operating temperature range spans from -55°C to 150°C for versatile industrial environments.
- Maximum drain source resistance is 125 mΩ, ensuring low conduction losses.
- Includes an integrated fast body diode optimizing resonant high power topologies.
Product Description
Infineon IPW65R125CFD7XKSA1 CoolMOS N-Channel MOSFET is engineered for high-efficiency power switching in demanding industrial and commercial applications. It features a maximum continuous drain current rating of 19 A and a maximum drain source voltage of 700 V, making it suitable for robust power electronic systems.
The 3-pin TO-247 package facilitates easy through-hole mounting and excellent thermal dissipation capabilities, allowing the device to handle up to 98 W of power dissipation reliably. Its typical gate charge of 36 nC at Vgs supports efficient switching performance, enabling minimal switching losses.
With an operating temperature range from -55°C up to 150°C, this MOSFET is well-suited for harsh industrial environments including server power supplies, telecommunications, solar inverters, and electric vehicle charging stations. The device's low maximum drain source resistance of 125 mΩ helps to ensure low conduction losses, improving overall energy efficiency.
The integrated fast body diode enhances performance in resonant high power topologies and contributes to superior hard-commutation ruggedness. This feature provides designers with an additional safety margin, particularly for circuits operating with increased bus voltages.
This MOSFET excels in delivering outstanding light-load and full-load efficiency in industrial switched-mode power supply (SMPS) applications.
The device's rugged design increases reliability and lifecycle in high power-density applications. Its application versatility extends across industrial automation, power management, and green energy sectors. Infineon’s CoolMOS technology ensures efficiency improvements over traditional MOSFETs, optimizing power conversion systems.
Choose the IPW65R125CFD7XKSA1 CoolMOS as a reliable component for optimized performance in industrial and commercial electronic designs. Explore the Electronics & Electricals category at EnvMart for more semiconductor devices and components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 A.
It features a maximum drain source voltage rating of 700 V.
The typical gate charge at Vgs is 36 nC.
It has a maximum power dissipation capability of 98 W.
The operating temperature range spans from -55°C to 150°C.
This model is housed in a 3-pin TO-247 package suitable for through-hole mounting.
The maximum drain source resistance is 125 mΩ.
The maximum gate source voltage for this device is 20 V.
The dimensions are 21.5 mm in height, 16.3 mm in length, and 5.3 mm in width.
It is suitable for applications such as server power supplies, telecommunications, solar inverters, and electric vehicle charging stations.
This model belongs to the CoolMOS series.
The forward voltage of the integrated fast body diode is 1 V.
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