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Infineon CoolMOS N-Channel MOSFET, 19 A, 700 V, 3-Pin TO-247 IPW65R125CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.5mm |
| Length | 16.3mm |
| Model | IPW65R125CFD7XKSA1 |
| Width | 5.3mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 19A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 125mΩ |
| Maximum Power Dissipation Pd | 98W |
| Typical Gate Charge Qg @ Vgs | 36nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- This CoolMOS MOSFET features a low drain-source resistance of 125 milliohms.
- It supports a maximum power dissipation of 98 watts and a maximum operating temperature of 150°C.
- Designed with a typical gate charge of 36 nC and maximum gate-source voltage of 20 V.
- Uses through-hole mounting for reliable industrial connections.
- Suitable for industrial applications including servers, telecom, solar systems, and EV charging.
Product Description
Infineon IPW65R125CFD7XKSA1 is a CoolMOS N-Channel MOSFET designed to handle up to 19 amperes of continuous drain current and withstand drain-source voltages up to 700 volts. Packaged in a 3-pin TO-247 through-hole format, it balances high power efficiency and rugged reliability.
This device integrates a fast body diode, improving hard-commutation performance and enhancing reliability in resonant high power topologies. It is engineered for industrial environments such as server power supplies, telecommunications equipment, solar power inverters, and electric vehicle charging stations.
With a maximum power dissipation rating of 98 W and an operating temperature range from -55°C to 150°C, it delivers robust thermal performance. The typical gate charge is 36 nanocoulombs at the gate threshold voltage, facilitating efficient switching.
The MOSFET's low maximum drain-source resistance of 125 milliohms supports high efficiency and improved full-load operation, aiding in power density optimization.
Key mechanical dimensions include a length of 16.3 mm, width of 5.3 mm, and height of 21.5 mm, suitable for standardized industrial mounting setups. This component has no special automotive certifications or other approvals but meets industry standards for power MOSFET devices.
Excellent hard-commutation ruggedness with integrated fast body diode. Extra margin for designs with increased bus voltage enhancing safety. Outstanding light-load and full-load efficiency in switched-mode power supplies.
Robust design for demanding electrical and thermal conditions. This Infineon CoolMOS MOSFET is essential for power electronics engineers seeking efficiency and reliability in high-voltage applications.
Explore more Infineon semiconductor products on EnvMart for reliable industrial-grade electronic components.
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Frequently Asked Questions
The maximum continuous drain current for this model is 19 amperes.
This MOSFET can withstand a maximum drain-source voltage of 700 volts.
It has a maximum power dissipation rating of 98 watts.
The dimensions are 16.3 mm in length, 5.3 mm in width, and 21.5 mm in height.
The maximum operating temperature is 150°C.
It uses a through-hole mounting type for reliable connections.
The typical gate charge is 36 nanocoulombs at the gate threshold voltage.
The maximum gate-source voltage for this model is 20 volts.
The maximum drain-source resistance is 125 milliohms.
The minimum operating temperature is -55°C.
Yes, it integrates a fast body diode, improving hard-commutation performance and enhancing reliability in high power topologies.
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