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Infineon CoolMOS N-Channel MOSFET 25 A 700 V 3-Pin TO-247 IPW65R090CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW65R090CFD7XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 25A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 900mΩ |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- 30A continuous drain current rating ensures high load capacity.
- 700 V maximum drain-source voltage suitable for power switching applications.
- TO-247 package provides robust thermal performance.
- Operating temperature range from -55°C to 150°C for industrial reliability.
- Maximum power dissipation of 127 W supports efficient power handling.
- Fast body diode integrated for improved switching speed.
- Pin count 3 with through-hole mount type for easy PCB integration.
- Typical gate charge of 53 nC facilitates fast gate switching.
Product Description
Infineon IPW65R090CFD7XKSA1 is a CoolMOS type N-Channel MOSFET designed for industrial and power electronic applications. It features a maximum continuous drain current of 25 A and a drain-source voltage rating of 700 V, making it suitable for high power switching and control circuits.
This device is housed in a TO-247 package, boasting a height of 21.1 mm, length of 16.13 mm, and width of 5.21 mm. Its through-hole mounting design ensures ease of installation in a variety of industrial and commercial electronic assemblies.
The MOSFET operates effectively within a temperature range from -55°C to 150°C, ensuring durability and performance in demanding environments such as servers, telecommunications, solar energy systems, and electric vehicle charging stations. It incorporates a fast body diode to enhance switching efficiency and reduce losses.
Additional technical features include a maximum power dissipation of 127 W and a low maximum drain-source resistance of 900 mΩ, allowing higher efficiency in power conversion and energy savings.
Highly efficient N-channel CoolMOS technology for resonant high power topologies. Excellent hard-commutation ruggedness for industrial reliability. Provides extra safety margin for designs with increased bus voltage. Enables increased power density in compact designs.
Improved full-load and light-load efficiency beneficial for industrial SMPS applications.
This MOSFET is commonly used in industrial, commercial, and automotive power electronics, offering robust performance and reliable operation across applications requiring efficient power switching and conversion.
Explore more Infineon MOSFETs and power semiconductor solutions on EnvMart for your industrial and electronic component needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 25 A.
This MOSFET has a maximum drain-source voltage rating of 700 V, making it suitable for high power switching applications.
It is housed in a TO-247 package, which provides robust thermal performance and ease of installation.
The operating temperature range is from -55°C to 150°C, ensuring reliability in various industrial environments.
The typical gate charge at Vgs is 53 nC, facilitating fast gate switching.
This model features a through-hole mount type for easy PCB integration.
The maximum power dissipation is 127 W, supporting efficient power handling.
The maximum drain-source resistance is 900 mΩ, which allows for higher efficiency in power conversion.
It is commonly used in industrial, commercial, and automotive power electronics for efficient power switching and conversion.
This MOSFET has a pin count of 3.
This model features an N-channel configuration, which is typical for high power applications.
The forward voltage of the integrated body diode is 1 V.
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