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Infineon CoolMOS N-Channel MOSFET 22 A 700 V 3-Pin TO-247 IPW65R110CFD7XKSA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 21.1mm |
| Length | 16.13mm |
| Model | IPW65R110CFD7XKSA1 |
| Width | 5.21mm |
| Mount Type | Through Hole |
| Series | CoolMOS |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 22A |
| Maximum Drain Source Voltage Vds | 700V |
| Maximum Drain Source Resistance Rds | 110mΩ |
| Maximum Power Dissipation Pd | 127W |
| Typical Gate Charge Qg @ Vgs | 53nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1V |
Key Features
- High maximum continuous drain current of 22 amperes.
- Maximum drain-source voltage rating of 700 volts for industrial applications.
- Integrated fast body diode enhancing switching performance.
- Robust 3-pin TO-247 through-hole mounting configuration.
- Maximum power dissipation rating of 127 watts for high efficiency.
- Wide operating temperature range from -55°C to 150°C.
- Low maximum drain-source resistance of 110 milliohms for minimal loss.
- Typical gate charge of 53 nanocoulombs supporting rapid switching.
Product Description
Infineon IPW65R110CFD7XKSA1 CoolMOS N-Channel MOSFET is a high-performance semiconductor device designed for industrial applications demanding high efficiency and reliability. This MOSFET features a continuous drain current capacity of 22 A and a drain-source voltage rating up to 700 V, making it ideal for high power switching circuits.
Housed in a 3-pin TO-247 package with through-hole mounting, this device supports excellent heat dissipation with a maximum power dissipation of 127 W. The integrated fast body diode enhances its switching capabilities, enabling improved performance in resonant topologies often found in servers, telecom systems, solar inverters, and electric vehicle charging stations.
Operating temperature ranges from -55°C to 150°C, the device provides remarkable thermal stability necessary for demanding industrial environments. Its low drain-source resistance of 110 milliohms ensures energy efficiency by reducing conduction losses.
High maximum continuous drain current of 22A. Durable TO-247 package suitable for through-hole mounting. Fast integrated body diode improves switching. Wide temperature range from -55°C up to 150°C. Efficient power dissipation rated at 127 W.
Compact form factor with precise dimensions for easy integration. Gate charge and voltage specifications support fast switching applications. Designed for industrial uses in power supplies, renewable energy, and automotive sectors.
It is suitable for industrial, manufacturing, renewable energy, telecommunications, and automotive sectors requiring reliable high-voltage switching devices. Explore this and other high-quality semiconductor components at EnvMart for your industrial and electronic design needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 22 amperes.
This MOSFET has a maximum drain-source voltage rating of 700 volts.
The maximum power dissipation rating for this unit is 127 watts.
The dimensions of this model are 21.1 mm in height, 16.13 mm in length, and 5.21 mm in width.
It uses a through-hole mounting configuration with a 3-pin TO-247 package.
The operating temperature range for this MOSFET is from -55°C to 150°C.
The maximum drain-source resistance for this device is 110 milliohms.
The typical gate charge for this model is 53 nanocoulombs.
The maximum gate-source voltage for this unit is 20 volts.
This model is suitable for industrial applications, power supplies, renewable energy, telecommunications, and automotive sectors.
It features an integrated fast body diode that enhances its switching performance.
The channel type of this model is N-channel.
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