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Infineon OptiMOS™ N-Channel Power MOSFET, 237 A Continuous Drain Current, 120 V Drain Source Voltage IPT030N12N3GATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 2.4mm |
| Length | 10.1mm |
| Model | IPT030N12N3GATMA1 |
| Width | 10.58mm |
| Mount Type | Surface |
| Series | OptiMOS™ |
| Maximum Operating Temperature | 175°C |
| Package Type | HSOF-8 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 237A |
| Maximum Drain Source Voltage Vds | 120V |
| Maximum Drain Source Resistance Rds | 3mΩ |
| Maximum Power Dissipation Pd | 375W |
| Typical Gate Charge Qg @ Vgs | 158nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.2V |
Key Features
- Optimized for battery-powered equipment ensuring high power density and thermal management.
- Low on-state resistance of 3 milliohms reduces power loss.
- Maximum power dissipation of 375 W supports high-performance operations.
- Wide operating temperature range from -55°C to 175°C suits harsh environments.
- Typical gate charge of 158 nC facilitates fast switching.
- Compact package dimensions of 10.58 mm width, 10.1 mm length, and 2.4 mm height save board space.
- Forward voltage drop of 1.2 V enhances efficiency.
- Maximum gate-source voltage is 20 V to handle voltage stress reliably.
Product Description
Infineon IPT030N12N3GATMA1 is a power N-Channel MOSFET from the OptiMOS™ series, designed for efficient power management in industrial and automotive applications. This device supports a maximum continuous drain current of 237 A and a maximum drain-source voltage of 120 V, making it suitable for heavy-duty low voltage switching uses.
Featuring a surface mount HSOF-8 package with 8 pins, the MOSFET offers a compact footprint with dimensions measuring 10.58 mm in width, 10.1 mm in length, and 2.4 mm in height. The device exhibits a low on-state resistance of 3 mΩ, which minimizes conduction losses and improves overall system efficiency. Additionally, its maximum power dissipation of 375 W allows for robust thermal performance under demanding conditions.
Operating efficiently over a wide temperature range of -55°C to 175°C, this MOSFET is engineered for reliability in harsh environments. The typical gate charge of 158 nC facilitates rapid switching, and a forward voltage drop of 1.2 V helps reduce energy consumption. Its maximum gate-source voltage rating of 20 V ensures durability against electrical stress.
The Infineon OptiMOS™ IPT030N12N3GATMA1 is commonly employed in industrial sectors such as electric vehicles, manufacturing equipment, battery management systems, and low voltage motor drives. Its high power density and improved thermal management reduce the requirement for parallel devices, thereby saving board space and system cost.
Optimized for battery-powered equipment with a balance of voltage margin and low resistance. High system efficiency reduces heat dissipation and power loss. Compact surface mount design facilitates modern PCB layouts. Robust thermal and electrical performance for industrial and automotive use.
Supports applications requiring high continuous current and power dissipation. Used extensively in light electric vehicle powertrains and low voltage drive systems. Compatible with automated manufacturing processes due to package type.
Wide temperature tolerance extends product lifespan in challenging operational settings. Explore more industrial semiconductor products and OptiMOS™ series components for advanced power electronics applications on EnvMart.
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Frequently Asked Questions
The Infineon IPT030N12N3GATMA1 supports a maximum continuous drain current of 237 A.
This model has a maximum drain-source voltage rating of 120 V.
It features a low on-state resistance of 3 milliohms, which helps minimize conduction losses.
The maximum power dissipation for the Infineon IPT030N12N3GATMA1 is 375 W.
The package dimensions are 10.58 mm in width, 10.1 mm in length, and 2.4 mm in height.
It operates efficiently over a wide temperature range from -55°C to 175°C.
The typical gate charge is 158 nC, facilitating rapid switching.
The maximum gate-source voltage for this device is 20 V.
It is commonly employed in industrial sectors such as electric vehicles, manufacturing equipment, and battery management systems.
This MOSFET uses a surface mount type, specifically in an HSOF-8 package.
This model has a pin count of 8.
The forward voltage drop is 1.2 V, which helps enhance efficiency.
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