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Toshiba 30 V 5 A Switching Diode Schottky 2-Pin USC CUS08F30,H3F(T

Category Schottky Diodes & Rectifiers Brand Toshiba Condition New

Specifications

Country of Origin India
Brand Toshiba
Model CUS08F30,H3F(T
Mount Type Surface
Series CUS08F30
Maximum Operating Temperature 125°C
Package Type USC
Minimum Operating Temperature -55°C
Standards/Approvals RoHS
Pin Count 2
Maximum Continuous Forward Current If 5A
Peak Reverse Repetitive Voltage Vrrm 30V
Rectifier Type Schottky
Peak Reverse Current Ir 50μA
Peak Non-Repetitive Forward Surge Current Ifsm 5A
Maximum Forward Voltage Vf 0.45V

Key Features

  • Maximum continuous forward current of 5 A for robust circuit performance.
  • Peak reverse repetitive voltage rated at 30 V for reliable blocking capability.
  • Low forward voltage of 0.45 V ensures efficient power usage.
  • Wide operating temperature range from -55°C to 125°C for diverse environments.
  • Compact USC package suitable for surface mount applications.
  • Peak reverse current as low as 50 μA to reduce leakage losses.
  • Meets RoHS compliance ensuring environmental friendliness.
  • Peak non-repetitive forward surge current rated at 5 A for transient tolerance.

Product Description

Toshiba CUS08F30,H3F(T is a high-quality 2-pin Schottky switching diode in a USC package, delivering a maximum continuous forward current of 5 A and a peak reverse repetitive voltage of 30 V. The diode features a low forward voltage drop of 0.45 V, which contributes to high efficiency in power management applications.

This component operates effectively in a wide temperature range from -55°C to 125°C, making it suitable for industrial, electronic manufacturing, and power supply uses where thermal stability is critical. Its compact USC package is compatible with surface mount technology, enabling space-saving PCB designs.

The diode is RoHS compliant, which assures conformity with environmental standards. It offers a peak reverse current of just 50 μA, minimizing leakage currents and enhancing energy efficiency. Additionally, its peak non-repetitive forward surge current rating of 5 A enables it to handle transient conditions without damage.

Manufactured using silicon epitaxial technology, the Toshiba CUS08F30,H3F(T switching diode is ideal for high-speed switching circuits, power rectification, and protection in electronic devices. Its reliable performance makes it applicable in industrial electronics, laboratory equipment, and commercial power supplies.

Maximum continuous forward current of 5 A provides robust handling of electrical loads. Peak reverse repetitive voltage of 30 V ensures reliable blocking in reverse-biased conditions. Low forward voltage drop of 0.45 V reduces power loss during conduction.

Wide operating temperature range (-55°C to 125°C) supports harsh environment usage. Compact surface mount USC package enables efficient PCB layout. Minimal peak reverse current of 50 μA reduces leakage and improves efficiency.

RoHS compliance confirms environmentally conscious manufacturing. 5 A non-repetitive surge current rating enhances transient surge resilience. Produced with silicon epitaxial process for stable electrical characteristics.

Suited for use in power supplies, switching regulators, and electronic circuits.

This Toshiba switching diode is a reliable semiconductor component for the electronics and industrial sectors, helping improve energy efficiency and device longevity. It is recommended for designers and engineers looking for high-speed Schottky diode solutions within compact surface-mount form factors.

Explore more semiconductor products like switches, diodes, and rectifiers in the Electronics & Electricals category on EnvMart.

Explore more products in our Schottky Diodes & Rectifiers category.

Toshiba 30 V 5 A Switching Diode Schottky 2-Pin USC CUS08F30,H3F(T
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Frequently Asked Questions

The maximum continuous forward current for this model is 5 A, allowing it to handle robust electrical loads effectively.

This diode has a peak reverse repetitive voltage rating of 30 V, ensuring reliable blocking capability in reverse-biased conditions.

The forward voltage drop for this diode is 0.45 V, which contributes to its efficiency in power management applications.

It operates effectively within a wide temperature range from -55°C to 125°C, making it suitable for diverse environments.

The Toshiba CUS08F30 is housed in a compact USC package, which is suitable for surface mount applications.

The peak reverse current is rated at 50 μA, which helps to minimize leakage losses and enhance energy efficiency.

This model has a peak non-repetitive forward surge current rating of 5 A, allowing it to handle transient conditions without damage.

Yes, the Toshiba CUS08F30 meets RoHS compliance, ensuring it conforms to environmental standards.

This diode features a pin count of 2, which is typical for surface mount components.

It is classified as a Schottky rectifier, known for its low forward voltage drop and fast switching capabilities.

This diode is produced using silicon epitaxial technology, which contributes to stable electrical characteristics.

The Toshiba CUS08F30 is manufactured in India.

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