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Taiwan Semiconductor Fast Recovery Diode 1 kV 800 mA Sub SMA 2-Pin RS1ML R3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 1.43mm |
| Length | 2.9mm |
| Model | RS1ML R3 |
| Width | 1.9mm |
| Mount Type | Surface |
| Series | RS1 |
| Maximum Operating Temperature | 150°C |
| Package Type | Sub SMA |
| Minimum Operating Temperature | -55°C |
| Pin Count | 2 |
| Maximum Continuous Forward Current If | 800mA |
| Peak Reverse Repetitive Voltage Vrrm | 1kV |
| Diode Configuration | Single |
| Rectifier Type | Fast Recovery |
| Peak Reverse Current Ir | 50μA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 30A |
| Maximum Forward Voltage Vf | 1.3V |
| Peak Reverse Recovery Time trr | 500ns |
Key Features
- This diode features a peak reverse repetitive voltage of 1 kV.
- It supports a maximum continuous forward current of 800 mA.
- The peak non-repetitive forward surge current rating is 30 A.
- It offers a fast recovery time of 500 ns for improved switching performance.
- The diode has a maximum forward voltage drop of 1.3 V.
- Operating temperature ranges from -55°C up to 150°C, suitable for various industrial environments.
- Surface mount Device (SMD) with Sub SMA package style for PCB assembly.
- Ideal for use in power electronics, switching circuits, and rectifier applications.
Product Description
Taiwan Semiconductor RS1ML R3 Fast Recovery Diode is designed for robust and efficient switching and rectification in electronic circuits. It features a high peak reverse repetitive voltage of 1 kV and supports a maximum continuous forward current of 800 mA, making it suitable for power management applications in industrial and electronic equipment.
The diode comes in a compact Sub SMA surface mount package with two pins, enabling easy PCB integration in various small-signal and power circuits. It offers a peak non-repetitive forward surge current of 30 A and a fast reverse recovery time of 500 ns, which improves switching efficiency and reduces losses.
Operating reliably in a wide temperature range from -55°C to 150°C, the RS1ML R3 diode maintains stable performance under demanding conditions. Its dimensions of 2.9 mm length, 1.9 mm width, and 1.43 mm height support compact and lightweight electronic designs.
This component is ideal for use in power supplies, switching regulators, and general-purpose rectification within industrial, manufacturing, electronics assembly, and laboratory testing environments. Though it does not carry specific automotive certifications, it meets essential performance standards for fast recovery diodes.
Peak reverse repetitive voltage: 1 kV. Maximum continuous forward current: 800 mA. Peak non-repetitive forward surge current: 30 A. Fast recovery time: 500 ns. Maximum forward voltage drop: 1.3 V. Operating temperature range: -55°C to 150°C.
Sub SMA surface mount package with 2 pins. Compact size: 2.9 mm × 1.9 mm × 1.43 mm. Suitable for industrial electronics and power switching applications. Manufactured origin: China.
Explore more semiconductor and diode products from Taiwan Semiconductor and browse related components in the Schottky Diodes & Rectifiers category at EnvMart to support your electronic designs and industrial projects.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The diode has a peak reverse repetitive voltage of 1 kV.
It supports a maximum continuous forward current of 800 mA.
The peak non-repetitive forward surge current rating is 30 A.
The diode offers a fast recovery time of 500 ns, improving switching performance.
The maximum forward voltage drop is 1.3 V.
It operates reliably in a temperature range from -55°C to 150°C.
The dimensions are 2.9 mm in length, 1.9 mm in width, and 1.43 mm in height.
It comes in a Sub SMA surface mount package with two pins.
The diode configuration is single.
This model is classified as a fast recovery rectifier.
The peak reverse current is rated at 50 μA.
It is suitable for use in power supplies, switching regulators, and general-purpose rectification.
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