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onsemi NPN Power Transistor 8A 80V TO-252 Surface Mount Single Configuration NJVMJD44H11T4G

Category Power Transistors Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 2.38mm
Length 6.73mm
Model NJVMJD44H11T4G
Width 6.22mm
Mount Type Surface
Series NJVMJD44H11
Maximum Operating Temperature 150°C
Package Type TO-252
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo 80V
Minimum DC Current Gain hFE 40
Transistor Polarity NPN
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 10V dc
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 20W
Maximum DC Collector Current Idc 8A
Transistor Configuration Single
Maximum Transition Frequency ft 20MHz
onsemi MJD44H11T4G Transistor, 8 A NPN, 80 V, 3-Pin DPAKBrand onsemi

Key Features

  • This transistor supports surface mount applications with a 3-pin DPAK configuration.
  • Maximum collector current of 8A ensures robust power handling.
  • Maximum collector-emitter voltage of 80V suitable for medium voltage circuits.
  • High power dissipation capacity of 20W enhances thermal management.
  • Minimum DC current gain of 40 guarantees effective amplification.
  • Operating temperature range from -55°C to 150°C suits demanding environments.
  • Maximum transition frequency of 20MHz supports high-speed switching.
  • Automotive qualified to AEC-Q101 standard for reliability.

Product Description

onsemi NJVMJD44H11T4G is a high-performance NPN power transistor designed for surface mount applications, available in a TO-252 package with a 3-pin DPAK configuration. It offers a maximum DC collector current of 8 amperes and a collector-emitter voltage rating of 80 volts, making it suitable for various industrial and automotive power switching circuits.

With a maximum power dissipation of 20 watts, this transistor effectively manages thermal loads, ensuring reliability under continuous operation. The device supports a wide operating temperature range from -55°C up to 150°C, catering to demanding environments such as automotive and industrial applications.

The NJVMJD44H11T4G features a minimum DC current gain (hFE) of 40, which provides efficient amplification, and a transition frequency of 20 MHz to support fast switching applications. Its compact physical dimensions with a length of 6.73 mm, width of 6.22 mm, and height of 2.38 mm allow for space-sensitive PCB layouts.

Manufactured to automotive standards and qualified for AEC-Q101, this transistor ensures dependable performance in critical applications. The single NPN transistor configuration in a surface mount TO-252 package simplifies design integration for power management, motor control, and switching applications in automotive, industrial, and manufacturing sectors.

This transistor supports surface mount applications with a 3-pin DPAK configuration. Maximum collector current of 8A ensures robust power handling. Maximum collector-emitter voltage of 80V suitable for medium voltage circuits.

High power dissipation capacity of 20W enhances thermal management. Minimum DC current gain of 40 guarantees effective amplification. Operating temperature range from -55°C to 150°C suits demanding environments. Maximum transition frequency of 20MHz supports high-speed switching.

Automotive qualified to AEC-Q101 standard for reliability. Compact dimensions: Length 6.73mm, Width 6.22mm, Height 2.38mm. Transistor polarity is NPN with single transistor configuration.

This product is ideal for use in industrial circuits, automotive electronic control units, power supply regulators, and switching power amplifiers. onsemi’s quality manufacturing and strict automotive compliance ensure long-term durability and consistent performance across diverse industrial and commercial applications.

Explore more in EnvMart’s Semiconductor Power Transistors category to find complementary components suitable for high-performance power control and amplification needs.

onsemi NPN Power Transistor 8A 80V TO-252 Surface Mount Single Configuration NJVMJD44H11T4G
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Frequently Asked Questions

The maximum collector current for the NJVMJD44H11T4G is 8A, ensuring robust power handling capabilities.

This transistor has a collector-emitter voltage rating of 80V, making it suitable for medium voltage circuits.

It has a maximum power dissipation capacity of 20W, which enhances thermal management during operation.

The operating temperature range for this model is from -55°C to 150°C, suitable for demanding environments.

The minimum DC current gain (hFE) for the NJVMJD44H11T4G is 40, ensuring effective amplification.

The maximum transition frequency is 20MHz, supporting high-speed switching applications.

The dimensions of the NJVMJD44H11T4G are 6.73mm in length, 6.22mm in width, and 2.38mm in height.

This model is packaged in a TO-252 format, which is suitable for surface mount applications.

It is qualified to the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

This transistor has a pin count of 3, which corresponds to its DPAK configuration.

The maximum emitter-base voltage (VEBO) for this model is 5V.

This transistor is suitable for use in industrial circuits, automotive electronic control units, and power supply regulators.

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