onsemi NPN Power Transistor TO-3P 250 V DC 15 A 200 W NJW3281G

onsemi NJW3281G is a high power NPN bipolar transistor designed for applications requiring robust electrical performance and durability. This transistor operates with a maximum collector current of 15 A and a maximum collector emitter voltage of 250 V dc, housed in a rugged TO-3P package suitable for through hole mounting. It supports power dissipation up to 200 W, making it ideal for power amplification and switching circuits in industrial, laboratory, and commercial electronic assemblies.

The device features a single transistor configuration with NPN polarity, ensuring straightforward integration into standard transistor circuits. Its minimum DC current gain (hFE) of 45 provides efficient current amplification. The transistor is rated to operate reliably over a wide ambient temperature range from -65°C to 150°C, providing versatility in harsh environments.

With a maximum transition frequency of 1 MHz, the NJW3281G transistor can handle moderate frequency switching tasks effectively. The device has a maximum emitter base voltage of 5 V and collector base voltage of 250 V dc, meeting the demands of various high voltage applications. Its compact physical size includes dimensions of 20.1 mm in height, 15.8 mm in length, and 5 mm in width, facilitating installation in constrained PCB spaces.

This transistor is suited for use in industrial power control, amplifier circuits, and general purpose power switching applications. The robust TO-3P package provides excellent heat dissipation characteristics and mechanical protection. Typical use cases include power management systems, electronic converters, motor control, and other electronic devices requiring high reliability and power handling.

Packaged with 3 leads, the NJW3281G is compatible with through-hole PCBs and heat sinks for enhanced thermal management. As a new product from onsemi, it adheres to stringent quality and manufacturing standards ensuring consistent performance in demanding electrical environments.

Designed for high power dissipation up to 200 W. Through hole mount type for reliable mechanical stability. Single transistor configuration with NPN polarity. Wide operating temperature range from -65°C to 150°C. High maximum transition frequency of 1 MHz suitable for various switching applications.

Includes 3 pins in compact TO-3P package. Minimum DC current gain (hFE) of 45 for efficient amplification. Maximum collector base voltage rated at 250 V dc. Equipped with emitter base voltage of 5 V maximum. Dimensions approximately 20.1 mm height, 15.8 mm length, and 5 mm width.

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