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onsemi NPN Power Transistor 8 A, 80 V, TO-252 Surface Mount, 3-Pin DPAK NJVMJD44H11T4G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | NJVMJD44H11T4G |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | NJVMJD44H11 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 80V |
| Minimum DC Current Gain hFE | 40 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Base Voltage VCBO | 10V dc |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 20W |
| Maximum DC Collector Current Idc | 8A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 20MHz |
Key Features
- This transistor offers a maximum power dissipation of 20 watts to support robust power handling.
- Designed for surface mounting with a 3-pin DPAK configuration, suitable for efficient PCB layouts.
- Has a minimum DC current gain (hFE) of 40, ensuring reliable amplification performance.
- Operates across a temperature range of -55°C to 150°C, suitable for demanding environments.
- Automotive standard compliant to AEC-Q101, confirming reliability in automotive applications.
- Compact dimensions of 6.73 mm length, 6.22 mm width, and 2.38 mm height allow for space-saving designs.
- Maximum transition frequency at 20 MHz enables moderate switching applications.
- Transistor polarity is NPN, with single transistor configuration optimized for power usage.
Product Description
onsemi NJVMJD44H11T4G is an NPN power transistor designed for industrial and automotive applications requiring reliable performance and efficient power handling. Rated for a maximum DC collector current of 8 A and a collector-emitter voltage of 80 V, this transistor is packaged in a TO-252 surface mount 3-pin DPAK format, facilitating compact and efficient PCB assembly.
This device offers a maximum power dissipation of 20 W, making it suitable for medium power applications in power regulation, motor control, and switching circuits. It features a minimum DC current gain of 40, guaranteeing effective amplification. The transistor supports operation in harsh conditions, with an operating temperature range from -55°C to 150°C.
The NJVMJD44H11T4G complies with the automotive AEC-Q101 standard, ensuring high reliability required in automotive electronics and industrial control systems. It has a maximum transition frequency of 20 MHz, adequate for a variety of switching and amplification tasks.
Dimensions are compact, with length of 6.73 mm, width of 6.22 mm, and height of 2.38 mm, optimizing it for space-constrained designs. Its 3-pin DPAK mounting allows solid and stable installation on PCB surfaces. Electrical limits include max collector-base voltage of 10 V and max emitter-base voltage of 5 V, ensuring durability in demanding circuits.
This transistor supports various industrial, automotive, and power electronics applications including power amplification and switching. The robust thermal and electrical specifications make it suitable for harsh environment usage in manufacturing, HVAC, and automotive sectors.
Ideal for equipment designers seeking a compact and reliable NPN transistor with automotive grade approval.
Choose onsemi NJVMJD44H11T4G for efficient power transistor performance within semiconductor-based industrial solutions. Explore more power transistor options in the onsemi range at EnvMart for your advanced electronics requirements.
Explore more products in our Power Transistors category.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) for this model is 80 V.
This transistor has a maximum power dissipation of 20 W, suitable for medium power applications.
The minimum DC current gain (hFE) for this model is 40, ensuring effective amplification performance.
It operates across a temperature range of -55°C to 150°C, making it suitable for demanding environments.
The dimensions of this model are 6.73 mm in length, 6.22 mm in width, and 2.38 mm in height.
The maximum DC collector current (Idc) for this transistor is 8 A.
This transistor is designed for surface mounting with a 3-pin DPAK configuration.
It complies with the automotive standard AEC-Q101, confirming its reliability for automotive applications.
The maximum transition frequency (ft) for this transistor is 20 MHz, suitable for moderate switching applications.
The transistor polarity for this model is NPN, optimized for power usage.
The maximum emitter-base voltage (VEBO) for this model is 5 V.
The maximum collector-base voltage (VCBO) for this transistor is 10 V.
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