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onsemi P-Channel MOSFET, 3.7 A, 8 V Enhancement, 3-Pin SOT-23 NTR2101P

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onsemi P-Channel MOSFET, 3.7 A, 8 V Enhancement, 3-Pin SOT-23 NTR2101P

Name: onsemi P-Channel MOSFET, 3.7 A, 8 V Enhancement, 3-Pin SOT-23 NTR2101P
Brand: onsemi
SKU: 236378
Price: 0.14 USD
Availability: InStock

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Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	1.01mm
Length	3.04mm
Model	NTR2101P
Width	1.4mm
Mount Type	Surface
Series	NTR2101P
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	3.7A
Maximum Drain Source Voltage Vds	8V
Maximum Drain Source Resistance Rds	120mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	960mW
Typical Gate Charge Qg @ Vgs	12nC
Maximum Gate Source Voltage Vgs	-8, +8V
Forward Voltage Vf	1V
P-Channel MOSFET Transistor, 3.7 A, 8 V, 3-Pin SOT-23 onsemi NTR2101PGBrand	ON Semiconductor

Key Features

Designed for enhancement mode operation ensuring reliable switching performance.
Maximum power dissipation of 960 mW allows for efficient thermal management.
Low drain-source resistance of 120 mΩ reduces conduction losses during operation.
Operating temperature ranges from -55°C to 150°C supporting diverse environmental conditions.
Compact dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height for high-density PCB layouts.
Typical gate charge of 12 nC at Vgs facilitates fast switching speeds.
Maximum gate-source voltage ratings of ±8 V enhance device robustness.
Forward voltage drop of 1 V ensures minimal power loss in conduction path.

Product Description

onsemi NTR2101P is a P-Channel Power MOSFET designed for reliable electronic switching applications. Featuring an enhancement channel mode and surface mount SOT-23 package, this device delivers a maximum continuous drain current of 3.7 A and a drain-source voltage rating of 8 V. Its robust construction supports operating temperatures from -55°C up to 150°C, making it suitable for a broad range of industrial and commercial electronics environments.

The MOSFET offers a low maximum on-resistance of 120 mΩ which ensures low conduction losses and improved efficiency in power management circuits. With a maximum power dissipation rating of 960 mW, appropriate thermal management can be maintained even at high switching speeds.

Its gate characteristics feature a typical gate charge of 12 nC at Vgs and a maximum gate-source voltage range of ±8 V, enabling efficient switching with minimal gate drive power requirements. The forward voltage of 1 V ensures lower power dissipation when the device is conducting.

Physical dimensions of 3.04 mm length, 1.4 mm width, and 1.01 mm height allow for compact PCB layouts and compatibility with automated surface mount assembly processes. The 3-pin SOT-23 package is widely adopted across various power management and signal switching applications.

This P-Channel MOSFET is ideal for use in electronic circuits requiring efficient, fast switching devices in industrial, electronic component manufacturing, consumer electronics, and automotive electronics applications.

Designed for reliable enhancement mode operation. Surface mount package suitable for automated assembly. Efficient power dissipation and low conduction losses. Wide operating temperature range for durable performance. Compact size for dense PCB implementations.

Low gate charge enables fast switching. Robust maximum gate-source voltage rating. Minimal forward voltage for improved efficiency. Three-pin SOT-23 surface mount package. Explore more on P-Channel MOSFETs and other semiconductor components at EnvMart for your electronic design and manufacturing needs.