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onsemi High Performance Dual N-Channel MOSFET Gate-Drive IC 4 A Source/Sink Current, 8-Pin SOIC NCP81075DR2G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.5mm |
| Length | 5mm |
| Model | NCP81075DR2G |
| Width | 4mm |
| Mount Type | Surface |
| Series | NCP81075 |
| Maximum Operating Temperature | 170°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -40°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 4A |
| Channel Mode | N |
| Maximum Gate Source Voltage Vgs | 400mV |
| Forward Voltage Vf | 1.1V |
Key Features
- Drives two N-Channel MOSFETs in high and low side configurations.
- Integrated bootstrap diode for high side gate drive operation.
- Capable of driving 1nF load with typical rise/fall times of 8ns/7ns.
- Wide supply voltage range from 8.5V to 20V supports various power applications.
- Fast propagation delay with typical 20 ns and 2 ns delay matching.
- Under-voltage lockout protection ensures safe operation of drive voltage.
- Operating junction temperature range from -40°C to 140°C for reliable performance.
- Ideal for high voltage buck converters, isolated power supplies, and solar inverter applications.
Product Description
onsemi NCP81075DR2G is a high performance dual N-Channel MOSFET gate-drive integrated circuit designed to drive MOSFETs operating at high voltages up to 180 V with high speed and efficiency. Packaged in an 8-Pin SOIC surface-mount case, this device integrates a bootstrap diode to support the high side gate drive, enabling exceptional simplicity in power circuit design.
This gate driver IC can source and sink up to 4 A of current, providing robust gate drive capability for MOSFETs in demanding industrial and electronic power conversion applications. It features independent high side and low side drivers with matched propagation delays around 3.5 ns, enhancing switching precision and performance.
The device supports driving 1nF capacitive loads with rapid rise and fall times of approximately 8 ns and 7 ns respectively, facilitating fast switching suitable for efficient power management. Its wide supply voltage operating range from 8.5 V to 20 V and fast propagation delays further contribute to versatile and stable operation over a broad set of conditions.
Additional built-in features include under-voltage lockout (UVLO) protection, which safeguards the driver voltage from improper operation at low voltages, and an operating junction temperature range of -40°C to 140°C, ensuring reliability in harsh industrial and automotive environments.
Typical applications for the NCP81075DR2G include high voltage synchronous buck converters, isolated power supplies, 2-switch forward and active clamp forward converters, as well as solar optimizers and solar inverters. These applications benefit from the integrated high and low side drivers with bootstrap diode and high drive current capabilities.
Drives two N-Channel MOSFETs in high and low side. Integrated bootstrap diode for high side gate driver. 4A source and 4A sink output current capability. Fast typical propagation delay of about 20 ns. Wide supply voltage of 8.5 V to 20 V.
Under-voltage lockout protection for reliable drive voltage. Operating junction temperature from -40°C to 140°C. Ideal usage in buck converters, isolated supplies, and solar inverter applications. Explore the extensive range of semiconductor components at EnvMart to find compatible and high-quality power management devices for your industrial and electronic design projects.
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Frequently Asked Questions
The maximum operating temperature for this model is 170°C.
It can source and sink up to 4 A of current, providing robust gate drive capability.
The supply voltage range is from 8.5 V to 20 V, supporting various power applications.
The typical rise time is approximately 8 ns and the fall time is about 7 ns when driving a 1nF load.
This model is packaged in an 8-Pin SOIC surface-mount case.
It features a typical propagation delay of about 20 ns with matched delays around 3.5 ns.
It includes under-voltage lockout (UVLO) protection to ensure safe operation at low voltages.
This model is ideal for high voltage synchronous buck converters, isolated power supplies, and solar inverter applications.
The height is 1.5 mm and the width is 4 mm.
The minimum operating temperature is -40°C, ensuring reliability in harsh environments.
It integrates a bootstrap diode to support high side gate drive operation, simplifying power circuit design.
The maximum gate-source voltage (Vgs) is 400 mV.
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