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onsemi 1-Element Uni-Directional ESD Protection Diode 0.24 W 3-Pin SOT-723 UESD3.3DT5G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 0.55mm |
| Length | 1.25mm |
| Model | UESD3.3DT5G |
| Width | 0.85mm |
| Mount Type | Surface |
| Series | uESD |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-723 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Number of Elements per Chip | 1 |
| Automotive Standard | AEC-Q101 |
| Diode Configuration | Common Anode |
| Direction Type | Uni-Directional |
| Minimum Breakdown Voltage Vbr | 5V |
| Maximum Reverse Stand-off Voltage Vwm | 3.3V |
| Peak Pulse Power Dissipation Pppm | 0.24W |
| Test Current It | 1mA |
| Maximum Reverse Leakage Current | 1μA |
Key Features
- Supports uni-directional ESD protection for sensitive electronic circuits.
- Features a common anode diode configuration optimized for reliable operation.
- Operates at a maximum reverse stand-off voltage of 3.3V and minimum breakdown voltage of 5V.
- Compact surface mount design suitable for high-density PCB applications.
- Certified to automotive standard AEC-Q101 ensuring quality and durability.
- Temperature range from -55°C to 150°C enables use in demanding environments.
- Low reverse leakage current of 1μA enhances efficiency.
- Single element per chip focused on precise transient voltage suppression.
Product Description
onsemi UESD3.3DT5G is a high-performance 1-element uni-directional electrostatic discharge (ESD) protection diode designed for protecting sensitive electronic components and circuits from transient voltage spikes. Its 0.24 W peak pulse power dissipation rating enables it to safely clamp voltage surges, ensuring system reliability in various electronic applications.
This diode is configured with a common anode and housed in a compact 3-pin SOT-723 surface mount package with dimensions of 1.25 mm length, 0.85 mm width, and 0.55 mm height, making it ideal for compact PCB layouts and high-density electronics manufacturing.
Operating voltage specifications include a maximum reverse stand-off voltage of 3.3 V and a minimum breakdown voltage of 5 V. The device supports a test current of 1 mA with a very low maximum reverse leakage current of 1μA, contributing to its high efficiency. It is suitable for use over a temperature range from -55°C to 150°C, allowing deployment in harsh industrial, automotive, and consumer electronics environments.
The UESD3.3DT5G diode meets the automotive industry standard AEC-Q101, underscoring its robustness and reliability for automotive electronics and other critical applications. Uni-directional ESD protection for transient voltage suppression.
Compact 3-pin SOT-723 surface mount package. Peak pulse power dissipation of 0.24 W. Operational temperature range from -55°C to 150°C. Compliance with automotive standard AEC-Q101. Low leakage current enhances performance efficiency.
Single element chip configuration for precise protection.
This diode is particularly suited for industrial electronics, automotive systems, telecommunications, and other applications requiring reliable ESD protection to improve device longevity and reduce failure rates.
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Frequently Asked Questions
The maximum reverse stand-off voltage of this diode is 3.3V.
The minimum breakdown voltage for this model is 5V.
It has a peak pulse power dissipation rating of 0.24 W.
The operational temperature range for this diode is from -55°C to 150°C.
This diode features a common anode configuration.
This model has a single element per chip.
It is housed in a compact 3-pin SOT-723 surface mount package.
The maximum reverse leakage current is 1μA.
This diode is certified to the automotive standard AEC-Q101.
The test current for this model is 1 mA.
The dimensions are 1.25 mm in length, 0.85 mm in width, and 0.55 mm in height.
This diode is suitable for industrial electronics, automotive systems, and telecommunications, providing reliable ESD protection.
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