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onsemi Uni-Directional 4-Element ESD Protection Array 100 W, 6-Pin UDFN-1210 ESDR0502NMUTBG

Category ESD Protection Diode Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 0.5mm
Length 1.2mm
Model ESDR0502NMUTBG
Width 1mm
Mount Type Surface
Maximum Operating Temperature 125°C
Package Type UDFN-1210
Minimum Operating Temperature -40°C
Pin Count 6
Number of Elements per Chip 4
Diode Configuration Complex Array
Direction Type Uni-Directional
Minimum Breakdown Voltage Vbr 6V
Maximum Reverse Stand-off Voltage Vwm 5.5V
Peak Pulse Power Dissipation Pppm 100W
Test Current It 1mA
Maximum Peak Pulse Current Ippm 3A
Maximum Reverse Leakage Current 1μA

Key Features

  • This device offers low capacitance for minimal signal distortion during use.
  • Designed with a complex diode configuration for enhanced protection against electrostatic discharge.
  • Operates reliably in temperatures from -40°C up to 125°C.
  • Features a minimum breakdown voltage of 6 V and maximum reverse stand-off voltage of 5.5 V.
  • The maximum peak pulse current is rated at 3 A to protect sensitive electronics.
  • Minimum operating test current is 1 mA to ensure accurate response under stress.
  • Has a compact form factor with dimensions 1.2 mm length, 1 mm width, and 0.5 mm height.
  • Suitable for surface mount applications with a 6-pin configuration for ease of integration.

Product Description

onsemi ESDR0502NMUTBG is a Uni-Directional 4-Element ESD Protection Array designed for protecting sensitive electronic components from electrostatic discharge events. Housed in a compact 6-pin UDFN-1210 surface mount package, this transient voltage suppressor device offers peak pulse power dissipation of 100 W, making it suitable for demanding industrial and commercial electronic applications.

The device features a complex diode array configuration that enhances protection efficiency while maintaining low capacitance to minimize signal attenuation. It operates over a wide temperature range from -40°C to 125°C, ensuring reliability in harsh environments.

Key electrical characteristics include a minimum breakdown voltage of 6 V, a maximum reverse stand-off voltage of 5.5 V, and the ability to handle peak pulse currents of up to 3 A. The minimum test current of 1 mA guarantees the device’s responsiveness to transient events.

The physical dimensions of the device are small with a length of 1.2 mm, width of 1 mm, and height of 0.5 mm, allowing for compact PCB designs in modern electronic assemblies. The 6-pin surface mount form factor supports easy installation and integration on various electronic circuit boards.

This ESD protection array from onsemi is ideal for use in electronic components, power connectors, and semiconductor devices where transient voltage and ESD events can damage sensitive circuitry. The device’s robust construction and performance parameters make it a strong choice for demanding industrial, automotive, telecommunications, and consumer electronics applications.

This low capacitance ESD protection array offers cost-effective transient suppression. It helps increase product durability by shielding against ESD damage in critical electronics. Onsemi’s product ensures compliance with industrial standards without automotive certification.

Explore more high-quality discrete semiconductors and TVS diode arrays in the onsemi product catalog at EnvMart for your specific electronic protection needs.

Explore more products in our ESD Protection Diode category.

onsemi Uni-Directional 4-Element ESD Protection Array 100 W, 6-Pin UDFN-1210 ESDR0502NMUTBG
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Frequently Asked Questions

The maximum peak pulse current for this model is rated at 3 A, providing protection for sensitive electronics against transient voltage events.

This unit has compact dimensions of 1.2 mm in length, 1 mm in width, and 0.5 mm in height, making it suitable for space-constrained applications.

It operates reliably within a temperature range of -40°C to 125°C, ensuring functionality in various environmental conditions.

The minimum breakdown voltage is 6 V, which helps in protecting against electrostatic discharge events.

This device supports surface mounting, which facilitates easy integration into various electronic circuit boards.

The ESDR0502NMUTBG features a complex diode configuration with 4 elements per chip, enhancing its protective capabilities.

The maximum reverse stand-off voltage is 5.5 V, which is crucial for protecting sensitive components from voltage spikes.

The minimum operating test current for this model is 1 mA, ensuring its responsiveness to transient events.

It employs a complex array configuration, which enhances protection efficiency while maintaining low capacitance.

The peak pulse power dissipation for this device is rated at 100 W, making it suitable for demanding applications.

This product is manufactured in India, contributing to its global availability.

It is designed for protecting sensitive electronic components, power connectors, and semiconductor devices from electrostatic discharge events.

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